公开(公告)号：US5967795A

公开(公告)日：1999-10-19

申请号：US520689

申请日：1995-08-30

申请人： Mietek Bakowsky ,  Bo Bijlenga ,  Ulf Gustafsson ,  Christopher Harris ,  Susan Savage

发明人： Mietek Bakowsky ,  Bo Bijlenga ,  Ulf Gustafsson ,  Christopher Harris ,  Susan Savage

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/861 ,  H01L21/20

CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/8611 ,  H01L2924/0002 ,  Y10S438/931

摘要： A semiconductor component comprises a pn junction in which both the p-conducting and the n-conducting layers of the pn junction are doped silicon carbide layers and the edge of at least one of the conducting layers of the pn junction exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards its outermost edge.

摘要翻译： 半导体部件包括pn结，其中pn结的p导电层和n导电层都是掺杂的碳化硅层，并且pn结的至少一个导电层的边缘呈逐步或均匀地减小 总电荷或有效表面电荷密度从在限定的工作结点处的初始值到在从结点的中心部分到其最外边缘的径向方向上的结的最外边缘处的零或几乎为零的总电荷。

公开(公告)号：US5977605A

公开(公告)日：1999-11-02

申请号：US954165

申请日：1997-10-20

申请人： Mietek Bakowsky ,  Bo Bijlenga ,  Ulf Gustafsson ,  Christopher Harris ,  Susan Savage

发明人： Mietek Bakowsky ,  Bo Bijlenga ,  Ulf Gustafsson ,  Christopher Harris ,  Susan Savage

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/861 ,  H01L23/58

CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/8611 ,  H01L2924/0002 ,  Y10S438/931

摘要： A semiconductor component, which comprises a pn junction, where both the p-conducting and the n-conducting layers of the pn junction constitute doped silicon carbide layers and where the edge of at least one of the conducting layers of the pn junction, exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.

摘要翻译： 一种半导体部件，其包括pn结，其中pn结的p导电层和n导电层都构成掺杂的碳化硅层，并且其中pn结的至少一个导电层的边缘呈现出 在从结合的中心部分到最外边缘的径向方向上，从总限制的工作结点处的初始值逐渐或均匀地减小总电荷或有效表面电荷密度，从而在连接的最外边缘处的零电荷或几乎为零的总电荷 。

公开(公告)号：US6002159A

公开(公告)日：1999-12-14

申请号：US683059

申请日：1996-07-16

申请人： Mietek Bakowski ,  Ulf Gustafsson ,  Kurt Rottner ,  Susan Savage

发明人： Mietek Bakowski ,  Ulf Gustafsson ,  Kurt Rottner ,  Susan Savage

IPC分类号： H01L29/861 ,  H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L23/58

CPC分类号： H01L29/0619 ,  H01L21/0465 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/6606 ,  H01L2924/0002 ,  Y10S438/931

摘要： A semiconductor component including a silicon carbide substrate. A pn junction includes doped layers of the substrate. The pn junction includes at a surface of the substrate a low doped first conductivity type layer and at a portion of the surface of the substrate a highly doped second conductivity type layer. An edge termination region of the pn junction laterally surrounds the pn junction provided at an edge of at least one of the layers of the pn junction. The edge termination region includes zones of the second conductivity type located at an edge of the highly doped second conductivity type layer. A charge content of the zones decreases toward an edge of the edge termination region in accordance with at least one characteristic selected from the group consisting of a stepwise or continuously decreasing total charge towards an outer border of the edge termination region and a decreasing effective sheet charge density toward an outer border of the edge termination region. An outermost zone of the edge termination region is completely depleted at full design voltage.

摘要翻译： 包括碳化硅衬底的半导体部件。 pn结包括衬底的掺杂层。 pn结在衬底的表面上包括低掺杂的第一导电类型层，并且在衬底的表面的一部分处包括高度掺杂的第二导电类型层。 pn结的边缘终止区横向地围绕设置在pn结的至少一个层的边缘处的pn结。 边缘终止区域包括位于高度掺杂的第二导电类型层的边缘处的第二导电类型的区域。 根据从边缘终止区域的外边界逐步或连续减小的总电荷和降低的有效片材电荷的组中选出的至少一个特征，区域的电荷含量朝向边缘终止区域的边缘减小 密度朝向边缘终止区域的外边界。 边缘终端区域的最外区域在完全设计电压下完全耗尽。

公开(公告)号：US6040237A

公开(公告)日：2000-03-21

申请号：US956959

申请日：1997-10-23

申请人： Mietek Bakowski ,  Ulf Gustafsson ,  Kurt Rottner ,  Susan Savage

发明人： Mietek Bakowski ,  Ulf Gustafsson ,  Kurt Rottner ,  Susan Savage

IPC分类号： H01L29/861 ,  H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L21/26

CPC分类号： H01L29/0619 ,  H01L21/0465 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/6606 ,  H01L2924/0002 ,  Y10S438/931

摘要： A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers and where the edge of the higher doped conducting layer of the pn junction exhibits a charge profile with a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the main pn junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.

摘要翻译： 一种用于处理所述元件的半导体元件和方法，其包括pn结，其中pn结的p导电（3）和n导电层（2）都构成掺杂的碳化硅层，并且其中 pn结的较高掺杂导电层表现出电荷分布，其逐次或均匀地减小总电荷或有效表面电荷密度，从主pn结处的初始值到零或几乎为零的总电荷或电荷密度在最外边缘处 在从连接的中心部分到最外边缘的径向方向上的连接处。

公开(公告)号：US06278133B1

公开(公告)日：2001-08-21

申请号：US09298116

申请日：1999-04-23

申请人： Christopher Harris ,  Andrei Konstantinov ,  Susan Savage

发明人： Christopher Harris ,  Andrei Konstantinov ,  Susan Savage

IPC分类号： H01L310312

CPC分类号： H01L29/0847 ,  G01N27/4143 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828 ,  H01L29/7838

摘要： A field effect transistor of SiC for high temperature application has the source region layer (4), the drain region layer (5) and the channel region layer (6, 7) vertically separated from a front surface (14), where a gate electrode (12) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from the atmosphere.

摘要翻译： 用于高温施加的SiC的场效应晶体管具有源区域层（4），漏极区域层（5）和沟道区域层（6,7）与前表面（14）垂直分离，其中栅电极 （12）被布置为用于在晶体管的操作中减小所述表面处的电场，并且在作为气体传感器的操作的情况下，允许除了栅电极之外的所有电极被保护免受大气。