Invention Grant
- Patent Title: Internal voltage generation circuit that down-converts external power supply voltage and semiconductor device generating internal power supply voltage on the basis of reference voltage
- Patent Title (中): 内部电压产生电路,其根据参考电压对外部电源电压和半导体器件进行下变换,产生内部电源电压
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Application No.: US780909Application Date: 1997-01-09
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Publication No.: US5982162APublication Date: 1999-11-09
- Inventor: Tadaaki Yamauchi
- Applicant: Tadaaki Yamauchi
- Applicant Address: JPX Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JPX Tokyo
- Priority: JPX8-100055 19960422
- Main IPC: G11C11/413
- IPC: G11C11/413 ; G05F1/46 ; G05F3/24 ; G05F3/26 ; G11C11/407 ; H02M3/07 ; H03K19/00 ; G05F3/16
Abstract:
An internal voltage-down power supply circuit includes a voltage-down circuit, a comparator circuit (current mirror amplifier), and a current source control circuit. The comparator circuit (current mirror amplifier) includes a current source (NMOS). When an external power supply voltage is increased, the current source control circuit reduces a control voltage applied to the gate of the current source to reduce the current from the current source. When the temperature becomes lower, the current source control circuit reduces the control voltage applied to the gate of the current source to reduce the current from the current source. Therefore, the closed loop gain of the internal voltage-down power supply circuit can be suppressed from increasing, and unnecessary oscillation of the internal power supply voltage can be prevented even when the external power supply voltage is increased and the temperature during operation is low.
Public/Granted literature
- US5262763A Electronic device with openable cases Public/Granted day:1993-11-16
Information query
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