发明授权
US5982659A Memory cell capable of storing more than two logic states by using
different via resistances
失效
能够通过使用不同的通路电阻存储两个以上逻辑状态的存储单元
- 专利标题: Memory cell capable of storing more than two logic states by using different via resistances
- 专利标题(中): 能够通过使用不同的通路电阻存储两个以上逻辑状态的存储单元
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申请号: US779998申请日: 1996-12-23
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公开(公告)号: US5982659A公开(公告)日: 1999-11-09
- 发明人: V. Swamy Irrinki , Thomas R. Wik , Raymond T. Leung , Ashok Kapoor , Alex Owens
- 申请人: V. Swamy Irrinki , Thomas R. Wik , Raymond T. Leung , Ashok Kapoor , Alex Owens
- 申请人地址: CA Milpitas
- 专利权人: LSI Logic Corporation
- 当前专利权人: LSI Logic Corporation
- 当前专利权人地址: CA Milpitas
- 主分类号: G11C11/56
- IPC分类号: G11C11/56 ; G11C17/00 ; G11C17/14
摘要:
A process which enables storage of more than two logic states in a memory cell. In one embodiment, a via is used to couple a diode between a word read line and a data read line. The via has a resistance which is set to one of a plurality of values at the time of manufacture. When the word read line is asserted, the voltage drop sustained across the via is indicative of the stored logic state. An analog-to-digital (A/D) converter is coupled to the data read line so as to sense the voltage drop and determine the state represented. Since the additional logic states may be used to represent additional information bits, this memory circuit increases the number of bits that may be stored per memory cell, thereby increasing the storage density and reducing the cost per bit.
公开/授权文献
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