Invention Grant
- Patent Title: Semiconductor growth method
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Application No.: US382324Application Date: 1995-02-01
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Publication No.: US5985025APublication Date: 1999-11-16
- Inventor: Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
- Applicant: Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: C30B23/08
- IPC: C30B23/08 ; C30B23/02 ; C30B29/68 ; H01L21/203 ; H01L21/338 ; H01L29/812 ; H01L29/88 ; C30B25/16
Abstract:
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
Public/Granted literature
- USD325916S Propeller cage for a boat motor Public/Granted day:1992-05-05
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