- 专利标题： Semiconductor growth method
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申请号： US382324申请日： 1995-02-01
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公开(公告)号： US5985025A公开(公告)日： 1999-11-16
- 发明人: Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
- 申请人： Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： C30B23/08
- IPC分类号： C30B23/08 ; C30B23/02 ; C30B29/68 ; H01L21/203 ; H01L21/338 ; H01L29/812 ; H01L29/88 ; C30B25/16
摘要：
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
公开/授权文献
- USD325916S Propeller cage for a boat motor 公开/授权日：1992-05-05
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