In a device for programming EPROM-Flash type memory cells of memory words of a memory, a bit line of a memory cell of a given rank of the first word and at least one bit line of a memory cell of the same rank in a word that is horizontally adjacent to this first word are connected together to two common programming connections by means of a bias circuit, and the bias circuit comprises two bias voltage inputs and one bias voltage output. The programming method consists in the successive programming, during different programming cycles, of the different cells of this first word and, during the same programming cycle, a different cell, of the same rank, in at least one word that is different from this first word is programmed.