发明授权
- 专利标题: Method for fabricating a thin film semiconductor device
- 专利标题(中): 薄膜半导体器件的制造方法
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申请号: US862697申请日: 1997-05-23
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公开(公告)号: US06004831A公开(公告)日: 1999-12-21
- 发明人: Shunpei Yamazaki , Yasuhiko Takemura , Akira Mase , Hideki Uochi
- 申请人: Shunpei Yamazaki , Yasuhiko Takemura , Akira Mase , Hideki Uochi
- 申请人地址: JPX Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JPX Kanagawa-ken
- 优先权: JPX3-273377 19910925
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/13 ; H01L21/00 ; H01L27/12
摘要:
A thin-film semiconductor device or integrated circuit comprising an insulating substrate, TFTs (thin-film transistors) formed on the substrate, and multilayer conductive interconnections. The circuit has a first metallization layer becoming gate electrodes and gate interconnections. The surface of the first metallization layer is oxidized by anodic oxidation to form an insulating coating on the surface of the first metallization layer. A second metallization layer becoming source and drain electrodes or conductive interconnections is then formed on the insulating coating directly or via an interlayer insulator. An improvement in the production yield and improved reliability are accomplished.