发明授权
US6011981A Oxide superconductor multilayered film and oxide superconductor
josephson device
失效
氧化物超导体多层膜和氧化物超导体约瑟夫森装置
- 专利标题: Oxide superconductor multilayered film and oxide superconductor josephson device
- 专利标题(中): 氧化物超导体多层膜和氧化物超导体约瑟夫森装置
-
申请号: US814172申请日: 1997-03-10
-
公开(公告)号: US6011981A公开(公告)日: 2000-01-04
- 发明人: Gustavo Alvarez , Furen Wang , Jian-Guo Wen , Naoki Koshizuka , Youichi Enomoto , Tadashi Utagawa , Shoji Tanaka
- 申请人: Gustavo Alvarez , Furen Wang , Jian-Guo Wen , Naoki Koshizuka , Youichi Enomoto , Tadashi Utagawa , Shoji Tanaka
- 申请人地址: JPX Tokyo
- 专利权人: International Superconductivity Technology Center
- 当前专利权人: International Superconductivity Technology Center
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-055221 19960312; JPX8-156627 19960618
- 主分类号: H01L39/12
- IPC分类号: H01L39/12 ; H01L39/22
摘要:
An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.