公开(公告)号：US6011981A

公开(公告)日：2000-01-04

申请号：US814172

申请日：1997-03-10

申请人： Gustavo Alvarez ,  Furen Wang ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Youichi Enomoto ,  Tadashi Utagawa ,  Shoji Tanaka

发明人： Gustavo Alvarez ,  Furen Wang ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Youichi Enomoto ,  Tadashi Utagawa ,  Shoji Tanaka

IPC分类号： H01L39/12 ,  H01L39/22

CPC分类号： H01L39/128 ,  H01L39/225 ,  Y10S505/702

摘要： An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.

摘要翻译： 一种氧化物超导多层薄膜结构，其具有由氧化物超导体薄膜层和非超导体薄膜层组成的层叠层结构，所述非超导薄膜层由两个薄膜层之间形成无应力界面的材料组合组成。 例如，由M'Ba2Cu3O7-δ（M'，Nd，Sm，Eu等的稀土元素表示的氧化物超导体的薄膜的层叠层结构构成的氧化物超导体多层膜， 这些的合金，δ;氧耗尽量）和由化学式M * Ba2Cu3O7-δ（M *; Pr，Sc等元素或它们的合金，δ;氧气）表示的氧化物薄膜 耗尽量）交替堆叠。 氧化物薄膜是通过脉冲激光沉积工艺或溅射工艺制造的薄膜。 可以通过使用多层膜来提供约瑟夫森装置。

公开(公告)号：US4567502A

公开(公告)日：1986-01-28

申请号：US587879

申请日：1984-03-14

申请人： Akio Nakagawa ,  Tadashi Utagawa ,  Tsuneo Tsukakoshi

发明人： Akio Nakagawa ,  Tadashi Utagawa ,  Tsuneo Tsukakoshi

IPC分类号： H01L21/331 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41 ,  H01L29/73 ,  H01L29/78 ,  H01L29/86 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L29/0619 ,  H01L29/7811 ,  H01L29/8611

摘要： A planar type semiconductor device having a high breakdown voltage, including a diffusion region of a P type formed in a semiconductor layer of an N type, a guard ring region of the P type formed in the semiconductor layer and surrounding the diffusion layer, and an insulating film covering the surface of the semiconductor layer between the diffusion and guard ring region. A field plate is provided which is kept at a potential equal to that of the diffusion region. The field plate covers the entire surface of that portion of the insulating film which is between the diffusion and guard ring regions.

摘要翻译： 具有高击穿电压的平面型半导体器件，包括形成在N型半导体层中的P型扩散区域，形成在半导体层中并围绕扩散层的P型保护环区域，以及 绝缘膜覆盖半导体层在扩散区和保护环区之间的表面。 提供场板，其保持在与扩散区域相同的电位。 场板覆盖位于扩散区和保护环区之间的绝缘膜的该部分的整个表面。

公开(公告)号：US4500744A

公开(公告)日：1985-02-19

申请号：US513390

申请日：1983-07-13

申请人： Hidetoshi Nozaki ,  Takaaki Kamimura ,  Tamothu Hatayama ,  Tadashi Utagawa

发明人： Hidetoshi Nozaki ,  Takaaki Kamimura ,  Tamothu Hatayama ,  Tadashi Utagawa

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/105 ,  H01L31/06

CPC分类号： H01L31/075 ,  H01L31/03921 ,  H01L31/1055 ,  Y02E10/548

摘要： A photovoltaic device comprises a transparent substrate, an amorphous silicon layer structure of a p-i-n type formed on the substrate and comprised of a p-layer, i-layer and n-layer, and an electrode formed on the amorphous silicon layer structure, wherein either the p-layer and n-layer of the amorphous silicon layer structure, on which light is incident is constituted such that its optical forbidden band gap is greater on the i-layer side than on the substrate side.

摘要翻译： 光电器件包括透明衬底，在衬底上形成的由p型，i层和n层构成的pin型非晶硅层结构，以及形成在非晶硅层结构上的电极，其中， 光入射的非晶硅层结构的p层和n层被构成为使得其第i层侧的光学禁带宽度大于衬底侧的光学禁带宽度。