Oxide superconductor multilayered film and oxide superconductor
josephson device
    1.
    发明授权
    Oxide superconductor multilayered film and oxide superconductor josephson device 失效
    氧化物超导体多层膜和氧化物超导体约瑟夫森装置

    公开(公告)号:US6011981A

    公开(公告)日:2000-01-04

    申请号:US814172

    申请日:1997-03-10

    IPC分类号: H01L39/12 H01L39/22

    摘要: An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.

    摘要翻译: 一种氧化物超导多层薄膜结构,其具有由氧化物超导体薄膜层和非超导体薄膜层组成的层叠层结构,所述非超导薄膜层由两个薄膜层之间形成无应力界面的材料组合组成。 例如,由M'Ba2Cu3O7-δ(M',Nd,Sm,Eu等的稀土元素表示的氧化物超导体的薄膜的层叠层结构构成的氧化物超导体多层膜, 这些的合金,δ;氧耗尽量)和由化学式M * Ba2Cu3O7-δ(M *; Pr,Sc等元素或它们的合金,δ;氧气)表示的氧化物薄膜 耗尽量)交替堆叠。 氧化物薄膜是通过脉冲激光沉积工艺或溅射工艺制造的薄膜。 可以通过使用多层膜来提供约瑟夫森装置。

    Method for fabricating oxide superconducting device
    3.
    发明授权
    Method for fabricating oxide superconducting device 失效
    氧化物超导器件的制造方法

    公开(公告)号:US06207067B1

    公开(公告)日:2001-03-27

    申请号:US09161697

    申请日:1998-09-29

    IPC分类号: C23F100

    CPC分类号: H01L39/2496 Y10S505/728

    摘要: A method for fabricating an oxide superconducting device includes the steps of: forming a V-shaped groove on a substrate by a converging ion beam and forming a barrier with reduced superconductivity on the oxide superconducting thin-film on the groove to form a Josephson Junction, wherein the irradiation ion amount of the converging ion beam is varied according to the position of the beam within the groove in such a manner that an inclination angle of the inclined portion of the substrate is fixed. An oxide superconducting device (a Josephson Junction device) having a high degree of flexibility in arrangement and with high reproducibility, and having a high degree of uniformity is provided.

    摘要翻译: 一种制造氧化物超导器件的方法包括以下步骤:通过会聚离子束在衬底上形成V形槽,并在沟槽上的氧化物超导薄膜上形成具有降低的超导性的阻挡层以形成约瑟夫逊结, 其中会聚离子束的照射离子量根据所述槽内的所述光束的位置以固定所述基板的倾斜部分的倾斜角度的方式而变化。 提供了具有高度的布置灵活性和高重现性并且具有高均匀度的氧化物超导装置(约瑟夫逊结装置)。

    Josephson junction in a wiring pattern of a superconductor oxide
    8.
    发明授权
    Josephson junction in a wiring pattern of a superconductor oxide 失效
    约瑟夫逊结在超导体氧化物的布线图中

    公开(公告)号:US5534715A

    公开(公告)日:1996-07-09

    申请号:US148277

    申请日:1993-11-08

    IPC分类号: H01L39/22 H01L39/24

    CPC分类号: H01L39/2496

    摘要: A Josephson junction is disclosed which includes a substrate of a single crystal having a substantially flat surface, a wiring pattern of an oxide superconductor formed on the flat surface of the substrate, and an altered region formed having a width of 300 nm or less and formed in the wiring pattern to intersect the wiring pattern, the crystal orientations of the wiring pattern on both sides of the altered region being equal to each other. The Josephson junction may be prepared by a process including the steps of: (a) coating a surface of a substrate of a single crystal with a normal metal to form a protecting layer over the surface of the substrate; (b) irradiating a predetermined portion of the protecting layer with a focused ion beam so that an irradiated portion is formed in the substrate; (c) removing the protecting layer from the substrate; and (d) forming a wiring pattern of an oxide superconductor on the surface of the substrate from which the protecting layer has been removed such that the wiring pattern crosses the irradiated portion of the substrate, thereby forming an altered portion in the wiring pattern at a position above the irradiated portion.

    摘要翻译: 公开了一种约瑟夫逊结,其包括具有基本上平坦的表面的单晶的衬底,形成在衬底的平坦表面上的氧化物超导体的布线图案和形成为具有300nm或更小的宽度的改变区域 在与布线图案相交的布线图案中,改变区域两侧的布线图案的晶体取向彼此相等。 约瑟夫逊结可以通过包括以下步骤的方法来制备:(a)用普通金属涂覆单晶的衬底的表面以在衬底的表面上形成保护层; (b)用聚焦离子束照射保护层的预定部分,使得在基板中形成照射部分; (c)从衬底上去除保护层; 以及(d)在已经去除了保护层的基板的表面上形成氧化物超导体的布线图案,使得布线图案与基板的照射部分交叉,从而在布线图案中形成改变部分 位于照射部分上方。

    Superconductor mixer and phase control method therefor
    10.
    发明授权
    Superconductor mixer and phase control method therefor 失效
    超导体混合器及其相位控制方法

    公开(公告)号:US5920811A

    公开(公告)日:1999-07-06

    申请号:US876244

    申请日:1997-06-16

    CPC分类号: H04B1/28 H03D7/005

    摘要: In a superconductor mixer, a non-linear element is provided on a substrate. The non-linear element comprises at least one Josephson junction connected in series. An antenna pattern of superconductor, an intermediate frequency output pattern of superconductor, and a bias current pattern of superconductor are connected to the non-linear element. A signal high frequency wave (RF) and a local reference frequency wave (LO) are received by the antenna pattern and then absorbed in the non-linear element to obtain an intermediate frequency (IF) signal. Then, with applying a current to the series connected Josephson junction in the non-linear element from the bias current pattern, the intermediate frequency (IF) signal as a frequency signal of a difference between the signal high frequency wave (RF) and the local reference frequency wave (LO) is output to the intermediate frequency output pattern. At this time, by varying the current supplied from the bias current pattern, a phase of the output intermediate frequency (IF) signal is varied.

    摘要翻译: 在超导体混合器中,在衬底上提供非线性元件。 非线性元件包括至少一个串联连接的约瑟夫逊结。 超导体的天线图案,超导体的中频输出图案和超导体的偏置电流图案被连接到非线性元件。 信号高频(RF)和局部参考频率波(LO)由天线方向接收,然后被吸收在非线性元件中以获得中频(IF)信号。 然后,通过从偏置电流模式向非线性元件中的串联连接的约瑟夫逊结施加电流,将中频(IF)信号作为信号高频波(RF)与本地 参考频率波(LO)被输出到中频输出模式。 此时,通过改变从偏置电流模式提供的电流,改变输出中频(IF)信号的相位。