Invention Grant
US6013136A Apparatus for plasma-supported back etching of a semiconductor wafer
失效
用于半导体晶片的等离子体支持的背面蚀刻的装置
- Patent Title: Apparatus for plasma-supported back etching of a semiconductor wafer
- Patent Title (中): 用于半导体晶片的等离子体支持的背面蚀刻的装置
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Application No.: US764703Application Date: 1996-12-02
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Publication No.: US6013136APublication Date: 2000-01-11
- Inventor: Josef Mathuni
- Applicant: Josef Mathuni
- Applicant Address: DEX Munich
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DEX Munich
- Priority: DEX4405667 19940222; DEX19502777 19950125
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/033 ; H01L21/311 ; C23C16/00
Abstract:
A method for the manufacture of highly-integrated circuits on a semiconductor substrate includes applying coatings to front and back sides of a wafer of semiconductor material in at least one deposition process, and subsequently removing the coating on the back of the wafer by etching being carried out with the front of the wafer being free of lacquer. The etching is performed in a process chamber in which reactive particles produced in a plasma only reach the back of the wafer, while advances of the reactive particles toward the front of the wafer are prevented by a protective neutral gas.
Public/Granted literature
- US5218383A Image forming apparatus employing led head Public/Granted day:1993-06-08
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