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US6013136A Apparatus for plasma-supported back etching of a semiconductor wafer 失效
用于半导体晶片的等离子体支持的背面蚀刻的装置

Apparatus for plasma-supported back etching of a semiconductor wafer
Abstract:
A method for the manufacture of highly-integrated circuits on a semiconductor substrate includes applying coatings to front and back sides of a wafer of semiconductor material in at least one deposition process, and subsequently removing the coating on the back of the wafer by etching being carried out with the front of the wafer being free of lacquer. The etching is performed in a process chamber in which reactive particles produced in a plasma only reach the back of the wafer, while advances of the reactive particles toward the front of the wafer are prevented by a protective neutral gas.
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