Invention Grant
- Patent Title: Method for fabricating electron multipliers
- Patent Title (中): 电子倍增器的制造方法
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Application No.: US713774Application Date: 1996-09-13
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Publication No.: US6015588APublication Date: 2000-01-18
- Inventor: Samuel Goukassian
- Applicant: Samuel Goukassian
- Applicant Address: MI Farmington
- Assignee: Electron R+D International, Inc.
- Current Assignee: Electron R+D International, Inc.
- Current Assignee Address: MI Farmington
- Main IPC: C23C14/06
- IPC: C23C14/06 ; C23C14/24 ; C23C14/50 ; H01J9/12 ; H01J43/10 ; H01J43/24 ; B05D5/12
Abstract:
A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.
Public/Granted literature
- US4702165A Fluid pressure screen printing apparatus, holder and assembly Public/Granted day:1987-10-27
Information query
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