公开(公告)号：US6015588A

公开(公告)日：2000-01-18

申请号：US713774

申请日：1996-09-13

Applicant: Samuel Goukassian

Inventor： Samuel Goukassian

IPC: C23C14/06 ,  C23C14/24 ,  C23C14/50 ,  H01J9/12 ,  H01J43/10 ,  H01J43/24 ,  B05D5/12

CPC classification number: H01J43/246 ,  C23C14/06 ,  C23C14/24 ,  C23C14/505 ,  H01J43/10 ,  H01J9/125 ,  H01J2201/32

Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.

Abstract translation: 提供一种制造电子倍增器的方法。 该方法包括在衬底上沉积随机沟道层，使得随机沟道层能够在存在电场的情况下响应于入射电子产生级联二次电子发射。

公开(公告)号：US5624706A

公开(公告)日：1997-04-29

申请号：US440754

申请日：1995-05-15

Applicant: Samuel Goukassian

Inventor： Samuel Goukassian

IPC: C23C14/06 ,  C23C14/24 ,  C23C14/50 ,  H01J9/12 ,  H01J43/10 ,  H01J43/24 ,  B05D5/12

CPC classification number: H01J43/246 ,  C23C14/06 ,  C23C14/24 ,  C23C14/505 ,  H01J43/10 ,  H01J9/125 ,  H01J2201/32

Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.

Abstract translation: 提供一种制造电子倍增器的方法。 该方法包括在衬底上沉积随机沟道层，使得随机沟道层能够在存在电场的情况下响应于入射电子产生级联二次电子发射。