发明授权
- 专利标题： Semiconductor transistor with stabilizing gate electrode
- 专利标题（中）： 具有稳定栅电极的半导体晶体管
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申请号： US926078申请日： 1997-09-02
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公开(公告)号： US06023086A公开(公告)日： 2000-02-08
- 发明人: Adolfo C. Reyes , Marino J. Martinez , Ernest Schirmann , Julio C. Costa
- 申请人： Adolfo C. Reyes , Marino J. Martinez , Ernest Schirmann , Julio C. Costa
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L23/482
- IPC分类号： H01L23/482 ; H01L29/423 ; H01L29/43 ; H01L29/76
摘要：
A semiconductor device includes a transistor (30, 51) having a gate electrode (15, 52) wherein the gate electrode (15, 52) has a highly resistive portion (24, 25, 55). The highly resistive portion (24, 25, 55) is integrated into the gate electrode (15, 52) and is coupled to the gate electrode (15, 52) using a via-less contact method.
公开/授权文献
- US4790323A Flow imaging detector 公开/授权日：1988-12-13
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