发明授权
US6045978A Chemically treated photoresist for withstanding ion bombarded processing 失效
化学处理的光致抗蚀剂,用于耐受离子轰击处理

Chemically treated photoresist for withstanding ion bombarded processing
摘要:
A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.
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