发明授权
US6045978A Chemically treated photoresist for withstanding ion bombarded processing
失效
化学处理的光致抗蚀剂,用于耐受离子轰击处理
- 专利标题: Chemically treated photoresist for withstanding ion bombarded processing
- 专利标题(中): 化学处理的光致抗蚀剂,用于耐受离子轰击处理
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申请号: US211700申请日: 1998-12-14
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公开(公告)号: US6045978A公开(公告)日: 2000-04-04
- 发明人: Dean Tran , William L. Jones , Harvey N. Rogers
- 申请人: Dean Tran , William L. Jones , Harvey N. Rogers
- 申请人地址: CA Redondo Beach
- 专利权人: TRW Inc.
- 当前专利权人: TRW Inc.
- 当前专利权人地址: CA Redondo Beach
- 主分类号: G03F7/075
- IPC分类号: G03F7/075 ; H01L21/027 ; G03C1/76
摘要:
A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.
公开/授权文献
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