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13 条记录 (耗时 0.014 秒)

    Wafer adhesive for semiconductor dry etch applications
    1.
    发明授权
    Wafer adhesive for semiconductor dry etch applications 有权
    用于半导体干蚀刻应用的晶片粘合剂

    公开(公告)号：US06551905B1

    公开(公告)日：2003-04-22

    申请号：US09693716

    申请日：2000-10-20

    申请人： Michael E. Barsky ,  Harvey N. Rogers ,  Vladimir Medvedev ,  Yaochung Chen ,  Richard Lai

    发明人： Michael E. Barsky ,  Harvey N. Rogers ,  Vladimir Medvedev ,  Yaochung Chen ,  Richard Lai

    IPC分类号： H01L2130

    CPC分类号： H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/68318 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

    摘要： A method is provided for backside processing a semiconductor wafer (10) including applying a polymer based protective coating (16) on the wafer, depositing a barrier layer of ceramic (18) on the protective coating, and coating the ceramic layer with a thermoplastic based adhesive (20). Thereafter, the wafer (10) is bonded to a perforated substrate (22) and then lapped and polished to a desired thickness and patterned with an etch mask. A high temperature plasma etching process is then used to etch via holes in the wafer (10). After etching and subsequent backside processing, the adhesive layer (20) is dissolved in acetone to separate the wafer (10) from the substrate (22). The protective coating (16) is then dissolved with a solvent to separate the ceramic layer (18) from the finished wafer (10).

    摘要翻译： 提供了一种用于背面处理半导体晶片（10）的方法，包括在晶片上施加基于聚合物的保护涂层（16），在保护涂层上沉积陶瓷（18）的阻挡层，并用基于热塑性的涂层 粘合剂（20）。 此后，将晶片（10）接合到多孔基材（22）上，然后研磨并抛光至所需厚度并用蚀刻掩模图案化。 然后使用高温等离子体蚀刻工艺来蚀刻晶片（10）中的通孔。 在蚀刻和随后的背面处理之后，将粘合剂层（20）溶解在丙酮中以将晶片（10）与基板（22）分离。 然后用溶剂溶解保护涂层（16）以将陶瓷层（18）与成品晶片（10）分离。

    Joint position detector with fiber optical microbend loop
    3.
    发明授权
    Joint position detector with fiber optical microbend loop 失效
    带光纤微弯环的接头位置检测器

    公开(公告)号：US5126558A

    公开(公告)日：1992-06-30

    申请号：US612367

    申请日：1990-11-14

    申请人： Harvey N. Rogers, Jr. ,  Nicholas Cook, II

    发明人： Harvey N. Rogers, Jr. ,  Nicholas Cook, II

    IPC分类号： H01J40/14

    CPC分类号： H01J40/14

    摘要： An apparatus for precisely controlling the movement and position of objects. The apparatus includes at least one moveable arm and a system for optically measuring the movement of the arm. The optical measurement system includes an optical fiber loop capable of producing microbend-induced optical attenuation when the loop is physically deformed by the movement of the arm. The apparatus further includes a signal source, a signal detector, and signal processing system for determining the attenuation of the signal between the signal source and the signal detector.

    摘要翻译： 一种用于精确控制物体运动和位置的装置。 该装置包括至少一个可动臂和用于光学地测量臂的运动的系统。 光学测量系统包括光纤环路，当环路由于臂的移动而物理变形时，该光纤环路能够产生微弯诱导的光学衰减。 该装置还包括用于确定信号源和信号检测器之间的信号的衰减的信号源，信号检测器和信号处理系统。

    Process for photochemical vapor deposition of oxide layers at enhanced deposition rates
    4.
    发明授权
    Process for photochemical vapor deposition of oxide layers at enhanced deposition rates 失效
    以增加的沉积速率对氧化物层进行光化学气相沉积的方法

    公开(公告)号：US4753818A

    公开(公告)日：1988-06-28

    申请号：US889562

    申请日：1986-07-25

    申请人： Harvey N. Rogers, Jr.

    发明人： Harvey N. Rogers, Jr.

    IPC分类号： C01B33/12 ,  C23C16/40 ,  C23C16/48 ,  H01L21/316 ,  B05D3/06

    CPC分类号： C23C16/482 ,  C23C16/402

    摘要： A process for depositing an oxide layer on a substrate by exposing the substrate to a selected vapor phase reactant, a chosen oxygen-containing precursor, and a selected physical quenching gas, in the presence of radiation of a selected wavelength. The radiation causes the direct dissociation of the oxygen-containing precursor to form neutral oxygen atoms in an excited electronic state. The quenching gas physically interacts with the oxygen atoms in the excited electronic state to form oxygen atoms in the unexcited electronic state. The latter then react with the vapor phase reactant to form the oxide, which deposits as a layer on the substrate. The rate of reaction to form and deposit the oxide layer is enhanced by the conversion of the excited electronic state oxygen atoms to unexcited electronic state oxygen atoms by the physical quenching gas.

    摘要翻译： 一种通过在所选择的波长的辐射存在下将衬底暴露于所选择的气相反应物，选择的含氧前体和选定的物理淬灭气体来在衬底上沉积氧化物层的方法。 辐射导致含氧前体的直接解离在激发的电子状态下形成中性氧原子。 淬灭气体与激发的电子态的氧原子物理相互作用，以形成未被电子化的电子态的氧原子。 然后，后者与气相反应物反应形成氧化物，其作为一层沉积在基底上。 通过物理淬灭气体将激发的电子状态的氧原子转化为未激发的电子状态的氧原子，提高了形成和沉积氧化物层的反应速率。

    Wafer thinning techniques
    6.
    发明授权
    Wafer thinning techniques 有权
    晶圆薄化技术

    公开(公告)号：US06764573B2

    公开(公告)日：2004-07-20

    申请号：US09977158

    申请日：2001-10-11

    申请人： Richard Lai ,  Harvey N. Rogers ,  Yaochung Chen ,  Michael E. Barsky

    发明人： Richard Lai ,  Harvey N. Rogers ,  Yaochung Chen ,  Michael E. Barsky

    IPC分类号： B08B302

    CPC分类号： H01L21/30612 ,  H01L21/302 ,  H01L21/67086 ,  H01L21/67346

    摘要： Apparatuses (10, 100), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses (10, 100) include a fixture (12, 102) having a plurality of horizontal receptacles (14, 16, 18, 20, 104, 106, 108, 110) for receiving the semiconductor wafers (W). The loaded fixtures (12, 102) are then immersed into an etchant solution (36, 146) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution (36, 146) is preferably heated to about 40° C.-50° C. and constantly stirred with a magnetic stirring bar (48, 158). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution (36, 146). The apparatuses (10, 100) are capable of simultaneously thinning several semiconductor wafers (V) down to a final thickness of about 25 &mgr;m.

    摘要翻译： 描述了使用非结晶和均匀蚀刻工艺的装置（10,100）及其使用方法，用于同时薄化多个半导体晶片（W）的背面。 装置（10,100）包括具有用于接收半导体晶片（W）的多个水平插座（14,16,18,20,104,106,108,110）的固定装置（12,102）。 然后将装载的固定装置（12,102）浸入能够从半导体晶片（W）的背面各向同性地去除半导体材料层的蚀刻剂溶液（36,146）中。 蚀刻剂溶液（36,146）优选加热至约40℃-50℃，并与磁力搅拌棒（48,158）持续搅拌。 一旦经过足够的时间，就从蚀刻剂溶液（36,146）中除去变薄的半导体晶片（W）。 装置（10,100）能够同时使多个半导体晶片（V）变薄至约25μm的最终厚度。

    Process for forming an environmentally stable optical coating thereby
    7.
    发明授权
    Process for forming an environmentally stable optical coating thereby 失效
    从而形成环境稳定的光学涂层的方法

    公开(公告)号：US4859492A

    公开(公告)日：1989-08-22

    申请号：US99697

    申请日：1987-09-21

    申请人： Harvey N. Rogers, Jr. ,  Ronald T. Smith

    发明人： Harvey N. Rogers, Jr. ,  Ronald T. Smith

    IPC分类号： G02B5/20 ,  C23C16/30 ,  C23C16/40 ,  C23C16/48 ,  G02B20060101 ,  G02B1/10 ,  G02B5/18

    CPC分类号： C23C16/401 ,  C23C16/482

    摘要： An optical coating which is stable upon sustained exposure to water vapor is provided by a low-temperature photochemical vapor deposition process. First, there are provided a first vapor phase reactant containing silicon, a second selected vapor phase reactant, and an oxygen-containing precursor which are capable of interacting upon radiation inducement to form the corresponding oxides of the vapor phase reactants. A chosen substrate is exposed to the first and second selected vapor phase reactants in predetermined proportions and the chosen oxygen-containing precursor in the presence of radiation of a predetermined wavelength to induce a reaction to form a coating on the substrate. The coating comprises silicon dioxides containing a predetermined proportion of the second oxide, such as lead oxide. The coating maintains stable optical properties upon sustained exposure to water vapor. Graded index optical elements as well as quarterwave stack structure may be formed by this process.

    摘要翻译： 通过低温光化学气相沉积工艺提供在持续暴露于水蒸汽时稳定的光学涂层。 首先，提供了含有硅的第一气相反应物，第二选择的气相反应物和含氧前体，其能够在辐射诱导下相互作用以形成相应的气相反应物的氧化物。 所选择的衬底以预定比例暴露于第一和第二选择的气相反应物，并且在预定波长的辐射存在下选择的含氧前体以引起在衬底上形成涂层的反应。 涂层包含含有预定比例的第二氧化物的氧化二氧化物，例如氧化铅。 在持续暴露于水蒸汽时，涂层保持稳定的光学性能。 可以通过该过程形成分级索引光学元件以及四分之一波长堆叠结构。

    Hermetically sealed optical fiber arrays and method for forming same
    10.
    发明授权
    Hermetically sealed optical fiber arrays and method for forming same 失效
    密封式光纤阵列及其形成方法

    公开(公告)号：US5061035A

    公开(公告)日：1991-10-29

    申请号：US588887

    申请日：1990-09-27

    申请人： Harvey N. Rogers, Jr.

    发明人： Harvey N. Rogers, Jr.

    IPC分类号： G02B6/04 ,  G02B6/06

    CPC分类号： G02B6/06 ,  G02B6/04

    摘要： Hermetically sealed optical fiber arrays comprising a bundle of metal-coated optical fibers which are sealed to each other and to a metal-coated supporting structure. The hermetic seals are formed by a process which uses fluxless solder and preferably a vacuum to enhance application of the solder.

    摘要翻译： 密封的光纤阵列包括彼此密封的金属涂覆的光纤束和金属涂覆的支撑结构。 气密密封通过使用无焊料焊料并优选真空来加强焊料应用的工艺形成。