发明授权
- 专利标题： Method of forming a titanium film and a barrier metal film on a surface of a substrate through lamination
- 专利标题（中）： 通过层压在基板的表面上形成钛膜和阻挡金属膜的方法
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申请号： US941272申请日： 1997-09-30
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公开(公告)号： US6051281A公开(公告)日： 2000-04-18
- 发明人: Yasuo Kobayashi , Kunihiro Tada , Hideki Yoshikawa
- 申请人： Yasuo Kobayashi , Kunihiro Tada , Hideki Yoshikawa
- 申请人地址： JPX Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-280036 19961001
- 主分类号： C23C16/34
- IPC分类号： C23C16/34 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L23/522
摘要：
A method of forming a titanium film and a titanium nitride film on a substrate by lamination which method is capable of suppressing contamination of the substrate due to the by-product and of reducing a contact resistance value of the titanium film. By carrying out the step of forming a titanium film on a surface of a substrate, the step of subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer, and the step of forming a barrier film (e.g., a titanium nitride film) on the titanium film having the nitride layer formed thereon, both the titanium film and the titanium nitride film are formed on the substrate by lamination.
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