发明授权
- 专利标题： Method of processing a substrate and apparatus for the method
- 专利标题（中）： 处理基板的方法和方法的装置
-
申请号： US826735申请日： 1997-04-04
-
公开(公告)号： US6059985A公开(公告)日： 2000-05-09
- 发明人: Takanori Yoshimura , Shigeru Mizuno , Shinya Hasegawa , Yoichiro Numasawa , Nobuyuki Takahashi
- 申请人： Takanori Yoshimura , Shigeru Mizuno , Shinya Hasegawa , Yoichiro Numasawa , Nobuyuki Takahashi
- 申请人地址： JPX Tokyo
- 专利权人： Anelva Corporation
- 当前专利权人： Anelva Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-115306 19960412
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/00 ; H01L21/20 ; H01L21/205 ; H01L21/285 ; H01L21/302 ; H01L21/3065 ; H01L21/68
摘要：
A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.
公开/授权文献
- US5263938A Guidewire introducer assembly 公开/授权日：1993-11-23
信息查询
IPC分类:
