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公开(公告)号：US6059985A
公开(公告)日：2000-05-09
申请号：US826735
申请日：1997-04-04
IPC分类号： H01L21/28 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/68
CPC分类号： H01L21/0209
摘要： A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.
摘要翻译： 处理基板的方法具有以下处理。 在通过CVD法将薄膜沉积到基板上之后，使基板的前表面靠近气体供给机构的气体供给表面，使其具有期望的间隔而不会在前表面和气体供给表面之间接触。 然后，将蚀刻气体供给到基板的后部空间中以在其中产生等离子体，并且还将吹扫气体供应到气体供给表面和基板之间的空间中，使得净化气体通过 衬底的周边边缘区域。 这种净化气体防止包括在等离子体中的自由基扩散到气体供应表面和基底之间的空间中。
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2.发明授权Method of depositing thin films by plasma-enhanced chemical vapor deposition 失效通过等离子体增强化学气相沉积法沉积薄膜的方法
公开(公告)号：US5956616A
公开(公告)日：1999-09-21
申请号：US863298
申请日：1997-05-27
申请人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
IPC分类号： C23C16/34 , C23C16/42 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556
摘要： A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.
摘要翻译： 提供了通过等离子体增强CVD在衬底上沉积薄膜的方法。 该方法包括将H2或H2和N2引入等离子体增强型CVD反应器中; 在反应器中产生等离子体; 将包含TiCl 4，硅烷，以及H 2或H 2和N 2的反应气体引入反应器中; 并在反应器中在衬底上沉积含有Si的Ti膜或TiN膜。
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公开(公告)号：US5676758A
公开(公告)日：1997-10-14
申请号：US635492
申请日：1996-04-22
申请人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
发明人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/45568 , C23C16/45591 , C23C16/4583 , C23C16/509 , H01J37/3244
摘要： A CVD mechanism includes a reactor, a substrate holder, a heating apparatus for heating the substrate holder, a reaction gas supply plate for supplying reaction gas into the reactor, and at least two cylinders disposed in a concentric form on the substrate-facing surface of the reaction gas supply plate so that reaction gas is supplied from an inward portion of each cylinder in the reaction gas supply plate. A power supply mechanism for supplying power to the reaction gas supply plate and the substrate holder, and ring magnets disposed in the upper and lower portions of the reactor are provided so that magnetic lines of force passing through a plasma space are generated by the facing magnetic pole parts of the respective magnets.
摘要翻译： CVD机构包括反应器，基板保持器，用于加热基板保持器的加热装置，用于将反应气体供应到反应器中的反应气体供给板，以及至少两个以同心形式设置在圆筒形基板的表面的基板 反应气体供给板，使得反应气体从反应气体供给板中的每个气缸的向内部分供给。 设置用于向反应气体供给板和基板保持器供电的供电机构和设置在电抗器的上部和下部的环形磁铁，使得通过等离子体空间的磁力线由面对的磁体 各个磁体的极部分。
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公开(公告)号：US6016765A
公开(公告)日：2000-01-25
申请号：US905767
申请日：1997-08-04
IPC分类号： H05H1/46 , C23C16/40 , C23C16/44 , C23C16/50 , C23C16/507 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/402 , C23C16/4401 , C23C16/507 , H01J37/321 , H01J37/32467
摘要： A plasma processing apparatus is furnished with a reactor which is furnished with a susceptor 12, a reaction gas delivery mechanism which delivers reaction gas to the inside of the reactor, a pumping mechanism 24 which pumps out an interior of the reactor, and a plasma-generating mechanism. The reactor is made of metal, the plasma-generating mechanism includes an at least single-winding coil 16 which produces an induced electric field, and the coil is established within the reactor and surrounding the plasma-generating space in a state surrounded by dielectrics parts 15 and 17.
摘要翻译： 等离子体处理装置配备有反应器，该反应器具有基座12，将反应气体输送到反应器内部的反应气体输送机构，泵出反应器内部的泵送机构24， 生成机制。 反应器由金属制成，等离子体产生机构包括产生感应电场的至少单绕组线圈16，并且线圈建立在反应器内并围绕等离子体产生空间围绕电介质部分 15和17。
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公开(公告)号：US06664496B2
公开(公告)日：2003-12-16
申请号：US10107304
申请日：2002-03-28
IPC分类号： B23K900
CPC分类号： H01J37/32082
摘要： A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.
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公开(公告)号：US20120225974A1
公开(公告)日：2012-09-06
申请号：US13404216
申请日：2012-02-24
申请人： Makoto Uno , Shinya Hasegawa
发明人： Makoto Uno , Shinya Hasegawa
CPC分类号： B60C1/0016 , C08K3/346 , C08L7/00 , C08L9/00 , C08L9/06
摘要： A rubber composition for tire, comprising at least a rubber component and an inorganic filler, wherein the inorganic filler has an angle of repose of 40 degrees or more, a Mohs' hardness of 2.0 or less, a BET specific surface area (BETS) (m2/g) of 10 m2/g or more, and a ratio (DBP)/(BET5) of the amount (ml/100 g) of dibutyl phthalate (DBP) absorbed to the BET specific surface area (BET5) (m2/g) of 2.0 or more, and wherein the content of the inorganic filler is from 0.5 to 50 parts by mass based on 100 parts by mass of the rubber component.
摘要翻译： 一种轮胎用橡胶组合物，至少含有橡胶成分和无机填料，其中，所述无机填料的休止角为40度以上，莫氏硬度为2.0以下，BET比表面积（BETS）（ m 2 / g）为10m 2 / g以上，吸附在BET比表面积（BET5）（BET / 5）的邻苯二甲酸二丁酯（DBP）的量（ml / 100g）的比（DBP）/（BET5） g）为2.0以上，相对于100质量份的橡胶成分，无机填料的含量为0.5〜50质量份。
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7.发明授权公开(公告)号：US08154096B2
公开(公告)日：2012-04-10
申请号：US12834040
申请日：2010-07-12
IPC分类号： H01L27/14 , H01L31/00 , H01L31/0232
CPC分类号： H01L31/035281 , H01L21/32136 , H01L21/32137 , H01L27/14643 , Y02E10/50
摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.
摘要翻译： 本发明的目的是提供一种具有不同锥角的侧面的光电转换元件，该光电转换元件逐步进行光电转换层的蚀刻。 与pn光电二极管相比，pin光电二极管具有高响应速度，但是具有大的暗电流的缺点。 认为暗电流的一个原因是通过在蚀刻中产生并沉积在光电转换层的侧表面上的蚀刻残余物导电。 光电转换元件的泄漏电流通过形成侧表面具有两个不同的锥形形状的结构而降低，通常具有均匀的表面，使得光电转换层具有p层的侧表面和侧表面 的n层，它们不在同一平面。
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公开(公告)号：US08004193B2
公开(公告)日：2011-08-23
申请号：US12094340
申请日：2006-11-02
摘要： A glass composition of the present invention is an oxide glass, in which the percentages of elements except for oxygen (O) contained therein are as follows, in terms of atom %: the amount of boron (B) exceeds 72% but does not exceed 86%, the total amount of lithium (Li), sodium (Na), and potassium (K) is 8% to 20%, the total amount of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba) is 1% to 8%, the amount of silicon (Si) is from 0% to less than 15%, and the amount of zinc (Zn) is from 0% to less than 2%. This glass composition further may contain molybdenum (Mo) and/or tungsten (W) in the range of more than 0% but not more than 3%.
摘要翻译： 本发明的玻璃组合物是氧化物玻璃，其中除了氧（O）以外的元素的百分比如下，以原子％表示：硼（B）的量超过72％但不超过 86％，锂（Li），钠（Na）和钾（K）的总量为8％〜20％，镁（Mg），钙（Ca），锶（Sr）和钡 （Ba）为1〜8％，硅（Si）的含量为0〜15％，锌（Zn）的含量为0〜2％。 该玻璃组合物还可以含有大于0％但不超过3％的钼（Mo）和/或钨（W）。
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9.发明申请公开(公告)号：US20100019337A1
公开(公告)日：2010-01-28
申请号：US12575910
申请日：2009-10-08
IPC分类号： H01L31/0232 , H01L31/0352
CPC分类号： H01L31/035281 , H01L21/32136 , H01L21/32137 , H01L27/14643 , Y02E10/50
摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.
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10.发明申请Substrate Heating Apparatus, Heating Method, and Semiconductor Device Manufacturing Method 有权基板加热装置，加热方法和半导体装置制造方法公开(公告)号：US20090191724A1
公开(公告)日：2009-07-30
申请号：US12360378
申请日：2009-01-27
CPC分类号： H01L21/68742 , F27B17/0025 , H01L21/67098 , H01L21/67115
摘要： A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.
摘要翻译： 具有加热基板的导电加热器的基板加热装置包括布置在导电加热器中并连接到灯丝电源以产生热电子的灯丝，以及加速灯丝和导电加热器之间的热电子的加速电源。 所述灯丝具有沿着与所述基板同心的内圆周以预定间隔形成的内周部，外周部以与所述内圆同心的外圆形以预定间隔形成，并且具有比所述内圆更大的直径， 通过连接每个内周部的端点和相应的一个外周部的端点而形成的区域。
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