发明授权
- 专利标题: Method for fabricating a cylindrical capacitor
- 专利标题(中): 圆柱形电容器的制造方法
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申请号: US66566申请日: 1998-04-27
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公开(公告)号: US6066541A公开(公告)日: 2000-05-23
- 发明人: Ming-Teng Hsieh , Tsu-An Lin , Pei-Ying Lee , Hsing-Chuan Tsai
- 申请人: Ming-Teng Hsieh , Tsu-An Lin , Pei-Ying Lee , Hsing-Chuan Tsai
- 申请人地址: TWX
- 专利权人: Nanya Technology Corporation
- 当前专利权人: Nanya Technology Corporation
- 当前专利权人地址: TWX
- 优先权: TWX87100746 19980120
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/8242 ; H01L21/20
摘要:
A method for fabricating a cylindrical capacitor is provided. This invention uses a composite structure composed of stacked barrier/scarificing/mask layers to prevent the contact plug of the capacitor from being attacked by wet etchants. An insulating layer is formed over a substrate having a source region, a drain region, and a gate electrode. Then a barrier layer, a sacrificing layer and a mask layer are sequentially formed over the insulating layer. Next, a contact hole is formed over the source region and spacers are formed on the sidewalls of the contact hole. After a storage electrode of the capacitor is formed and exposed portions of the mask layer are removed, the sacrificing layer is isotropically etched using the spacers and the barrier layer as stopping layers. Thereafter, a capacitor dielectric layer and an opposite electrode are formed over the storage electrode thereby completing the capacitor.
公开/授权文献
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