发明授权
- 专利标题: Method of passivating copper interconnects in a semiconductor
- 专利标题(中): 钝化半导体中的铜互连的方法
-
申请号: US339085申请日: 1999-06-23
-
公开(公告)号: US6071808A公开(公告)日: 2000-06-06
- 发明人: Sailesh M. Merchant , Sudhanshu Misra , Pradip K. Roy
- 申请人: Sailesh M. Merchant , Sudhanshu Misra , Pradip K. Roy
- 申请人地址: NJ Murray Hill
- 专利权人: Lucent Technologies Inc.
- 当前专利权人: Lucent Technologies Inc.
- 当前专利权人地址: NJ Murray Hill
- 主分类号: C23C16/40
- IPC分类号: C23C16/40 ; H01L21/28 ; H01L21/304 ; H01L21/306 ; H01L21/321 ; H01L21/3213 ; H01L21/768 ; H01L21/4763
摘要:
A method of passivating copper interconnects is disclosed. A freshly electrodeposited copper interconnect such as formed as via/trench structures in semiconductor manufacturing is chemically converted to passivating surface of copper tungstate or copper chromate either through MOCVD reaction with vapors of tungsten or chromium alkoxides, or by pyrolytic reaction with tungsten or chromium carbonyl in the presence of O.sub.2. The copper interconnect having the formed passivation service is then chemically mechanically polished. The process can be used with various manufacturing processes, including single and dual damascene processes.