发明授权
- 专利标题： Semiconductor laser device and optical disk apparatus using the same
- 专利标题（中）： 半导体激光装置及其使用的光盘装置
-
申请号： US732279申请日： 1996-10-30
-
公开(公告)号： US6072817A公开(公告)日： 2000-06-06
- 发明人: Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
- 申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX7-075451 19950331; JPX7-118154 19950517
- 主分类号： G11B7/12
- IPC分类号： G11B7/12 ; G11B7/125 ; G11B7/13 ; G11B7/135 ; G11B7/22 ; H01S5/00 ; H01S5/022 ; H01S5/026 ; H01S5/065 ; H01S5/20 ; H01S5/223 ; H01S5/227 ; H01S5/30 ; H01S5/32 ; H01S5/323 ; H01S5/343 ; H01S3/19
摘要：
A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.
公开/授权文献
信息查询
IPC分类:
