发明授权
US06077715A Method for forming ferroelectric dielectric for integrated circuit
applications at microwave frequencies
失效
用于在微波频率下形成用于集成电路应用的铁电电介质的方法
- 专利标题: Method for forming ferroelectric dielectric for integrated circuit applications at microwave frequencies
- 专利标题(中): 用于在微波频率下形成用于集成电路应用的铁电电介质的方法
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申请号: US764367申请日: 1996-12-12
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公开(公告)号: US06077715A公开(公告)日: 2000-06-20
- 发明人: Vasanta Chivukula , Pak K. Leung
- 申请人: Vasanta Chivukula , Pak K. Leung
- 申请人地址: CAX Montreal
- 专利权人: Nortel Networks Corporation
- 当前专利权人: Nortel Networks Corporation
- 当前专利权人地址: CAX Montreal
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L27/115
摘要:
A ferroelectric dielectric for microwave applications is provided comprising a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapour, preferably with the addition of a few percent of ozone, and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.
公开/授权文献
- US5211216A Casting process 公开/授权日:1993-05-18