中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US6083839A Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control 失效
独特的化学机械平面化方法，利用磁性浆料进行抛光和磁场处理控制

  • Patent Title: Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control
  • Patent Title (中): 独特的化学机械平面化方法，利用磁性浆料进行抛光和磁场处理控制
  • Application No.: US1509
    Application Date: 1997-12-31
  • Publication No.: US6083839A
    Publication Date: 2000-07-04
  • Inventor: Lawrence D. Wong
  • Applicant: Lawrence D. Wong
  • Applicant Address: CA Santa Clara
  • Assignee: Intel Corporation
  • Current Assignee: Intel Corporation
  • Current Assignee Address: CA Santa Clara
  • Main IPC: B24B1/00
  • IPC: B24B1/00 ;  B24B37/04 ;  C09G1/02 ;  H01L21/3105 ;  H01L21/304
Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control
Abstract:
The present invention is an improved apparatus and process for chemical mechanical polishing (CMP) layers which have a low dielectric constant (k). The present invention uses a magnetic slurry and a magnetic coil for polishing the wafer with the magnetic slurry. By using a magnetic slurry and a magnetic coil the force used during polishing can be controlled resulting greater control over the CMP process during the polishing of low k materials.
Abstract(Chinese):

本发明是一种改进的具有低介电常数（k）的化学机械抛光（CMP）层的设备和方法。 本发明使用磁性浆料和磁性线圈来研磨具有磁性浆料的晶片。 通过使用磁性浆料和磁性线圈，可以控制在抛光期间使用的力，从而在抛光低k材料期间对CMP工艺的更大控制。

Public/Granted literature
Information query
Global Dossier Espacenet
Patent Agency Ranking
0/0