发明授权
- 专利标题: Power MOSFET device having low on-resistance and method
- 专利标题(中): 功率MOSFET器件具有低导通电阻和方法
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申请号: US962725申请日: 1997-11-03
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公开(公告)号: US6084268A公开(公告)日: 2000-07-04
- 发明人: Edouard D. de Fresart , Pak Tam , Hak-Yam Tsoi
- 申请人: Edouard D. de Fresart , Pak Tam , Hak-Yam Tsoi
- 申请人地址: AZ Phoenix
- 专利权人: Semiconductor Components Industries, LLC
- 当前专利权人: Semiconductor Components Industries, LLC
- 当前专利权人地址: AZ Phoenix
- 主分类号: H01L29/08
- IPC分类号: H01L29/08 ; H01L29/423 ; H01L29/78 ; H01L29/76 ; H01L29/94 ; H01L31/062
摘要:
A power MOSFET device (40) includes one or more localized regions of doping (61,62,63) formed in a more lightly doped semiconductor layer (42). The one or more localized regions of doping (61,62,63) reduce inherent resistances between the source regions (47,48) and the drain region (41) of the device. The one or more localized regions of doping (61,62,63) are spaced apart from the body regions (44,46) to avoid detrimentally impacting device breakdown voltage. In an alternative embodiment, a groove (122) or trench (152) design is incorporated to reduce JFET resistance (34). In a further embodiment, a gate dielectric layer having a thick portion (77,97,128,158) and thin portions (76,126,156) is incorporated to enhance switching characteristics and/or breakdown voltage.
公开/授权文献
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