发明授权
- 专利标题： Method of forming a capacitor including a bottom silicon diffusion barrier layer and a top oxygen diffusion barrier layer
- 专利标题（中）： 形成包括底部硅扩散阻挡层和顶部氧扩散阻挡层的电容器的方法
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申请号： US911374申请日： 1997-08-07
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公开(公告)号： US6090658A公开(公告)日： 2000-07-18
- 发明人: Jae Hyun Joo
- 申请人： Jae Hyun Joo
- 申请人地址： KRX Cheongju-si
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Cheongju-si
- 优先权： KRX96-61253 19961203
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/02 ; H01L21/8242 ; H01L29/92
摘要：
Capacitor in a semiconductor device suitable for diffusion prevention between a lower electrode and a polysilicon and oxidation prevention of a barrier metal layer and a method for manufacturing the same are disclosed. The capacitor in a semiconductor device includes a semiconductor substrate, an insulating layer having a contact hole on the substrate, a plug formed in the contact hole, a first barrier layer on the plug, a second barrier layer on the first barrier layer, a lower electrode on the second barrier layer, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer.
公开/授权文献
- US5293224A White balance control system 公开/授权日：1994-03-08
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