发明授权
- 专利标题： Method of making a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US736324申请日： 1996-10-23
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公开(公告)号： US6090699A公开(公告)日： 2000-07-18
- 发明人: Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
- 申请人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-272784 19931029; JPX6-070156 19940315; JPX6-249984 19940919
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/60 ; H01L21/768 ; H01L23/532 ; H01L21/4763
摘要：
A method of making a semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
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