公开(公告)号：US06794286B2

公开(公告)日：2004-09-21

申请号：US09558053

申请日：2000-04-26

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散 形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US6090699A

公开(公告)日：2000-07-18

申请号：US736324

申请日：1996-10-23

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915

摘要： A method of making a semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 制造半导体器件的方法包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的用于防止金属扩散的绝缘阻挡层 构成布线层，形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US5592024A

公开(公告)日：1997-01-07

申请号：US330998

申请日：1994-10-28

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/41 ,  H01L29/43

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915

摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散 形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US20100102000A1

公开(公告)日：2010-04-29

申请号：US12561768

申请日：2009-09-17

申请人： Yoshihisa KAWAMURA ,  Hisako Aoyama ,  Daizo Mutoh

发明人： Yoshihisa KAWAMURA ,  Hisako Aoyama ,  Daizo Mutoh

IPC分类号： B01D15/00

CPC分类号： G01N1/4077 ,  G01N2001/4088

摘要： A method for filtering a chemical in which a first chemical stored in a first tank is filtered by a filter and a second chemical obtained by the filtering is stored in a second tank has: adding the capture amounts corresponding to the individual first chemicals first to n-th stored in the first tank, and getting an added capture amount; and comparing the added capture amount and a predetermined limit capture amount of the filter, and exchanging the filter based on the comparison result.

摘要翻译： 一种用于过滤化学品的方法，其中通过过滤器过滤存储在第一罐中的第一化学品的化学品和通过过滤获得的第二化学品储存在第二罐中的方法：将对应于各个第一化学品的捕获量首先添加到n 储存在第一个储罐中，并获得额外的捕获量; 以及比较所添加的捕获量和所述滤波器的预定极限捕获量，以及基于所述比较结果交换所述滤波器。

公开(公告)号：US20080014535A1

公开(公告)日：2008-01-17

申请号：US11797529

申请日：2007-05-04

申请人： Hisako Aoyama ,  Yuji Kobayashi

发明人： Hisako Aoyama ,  Yuji Kobayashi

IPC分类号： G03C5/00

CPC分类号： G01N21/956 ,  G03F1/44

摘要： A method for detecting defects which originate from a chemical solution includes coating a chemical solution on a surface of a mask, and radiating an exposure beam to the mask on which the chemical solution is coated, thereby performing enlarged projection exposure on a resist film which is formed on a surface of a substrate for an inspection. Further, the method for detecting defects which originate from a chemical solution includes performing an inspection of defects on the resist film which has been subjected to the enlarged projection exposure, and determining whether a result of the inspection meets a predetermined standard.

摘要翻译： 用于检测来自化学溶液的缺陷的方法包括将化学溶液涂布在掩模的表面上，并且将曝光光束照射到其上涂覆有化学溶液的掩模，从而对抗蚀剂膜进行放大的投影曝光，该抗蚀剂膜是 形成在用于检查的基板的表面上。 此外，用于检测来自化学溶液的缺陷的方法包括对经过放大的投影曝光的抗蚀剂膜上的缺陷进行检查，并确定检查结果是否达到预定标准。

公开(公告)号：US07075098B2

公开(公告)日：2006-07-11

申请号：US10730921

申请日：2003-12-10

申请人： Takahiro Ikeda ,  Daisuke Kawamura ,  Hisako Aoyama

发明人： Takahiro Ikeda ,  Daisuke Kawamura ,  Hisako Aoyama

IPC分类号： G01N21/86

CPC分类号： G01N21/9501 ,  G01N21/95607

摘要： A method of selecting a pattern to be measured includes selecting only points from a combination of all factors effecting dimensional fluctuations. For example, fluctuation between wafers, fluctuation in a wafer, and fluctuation in a chip are candidates for measurement points of patterns to be measured. Further, the number of the selected points corresponds to a divisor of the combination of all factors.

摘要翻译： 选择要测量的图案的方法包括仅从影响尺寸波动的所有因素的组合中选择点。 例如，晶片之间的波动，晶片的波动和芯片的波动是待测量图案的测量点的候选。 此外，所选择的点的数量对应于所有因子的组合的除数。

公开(公告)号：US07862965B2

公开(公告)日：2011-01-04

申请号：US11797529

申请日：2007-05-04

申请人： Hisako Aoyama ,  Yuji Kobayashi

发明人： Hisako Aoyama ,  Yuji Kobayashi

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： G01N21/956 ,  G03F1/44

摘要： A method for detecting defects which originate from a chemical solution includes coating a chemical solution on a surface of a mask, and radiating an exposure beam to the mask on which the chemical solution is coated, thereby performing enlarged projection exposure on a resist film which is formed on a surface of a substrate for an inspection. Further, the method for detecting defects which originate from a chemical solution includes performing an inspection of defects on the resist film which has been subjected to the enlarged projection exposure, and determining whether a result of the inspection meets a predetermined standard.

摘要翻译： 用于检测来自化学溶液的缺陷的方法包括将化学溶液涂布在掩模的表面上，并且将曝光光束照射到其上涂覆有化学溶液的掩模，从而对抗蚀剂膜进行放大的投影曝光，该抗蚀剂膜是 形成在用于检查的基板的表面上。 此外，用于检测来自化学溶液的缺陷的方法包括对经过放大的投影曝光的抗蚀剂膜上的缺陷进行检查，并确定检查结果是否达到预定标准。

公开(公告)号：US08097169B2

公开(公告)日：2012-01-17

申请号：US12561768

申请日：2009-09-17

申请人： Yoshihisa Kawamura ,  Hisako Aoyama ,  Daizo Mutoh

发明人： Yoshihisa Kawamura ,  Hisako Aoyama ,  Daizo Mutoh

IPC分类号： C02F1/00

CPC分类号： G01N1/4077 ,  G01N2001/4088

摘要： A method for filtering a chemical in which a first chemical stored in a first tank is filtered by a filter and a second chemical obtained by the filtering is stored in a second tank has: adding the capture amounts corresponding to the individual first chemicals first to n-th stored in the first tank, and getting an added capture amount; and comparing the added capture amount and a predetermined limit capture amount of the filter, and exchanging the filter based on the comparison result.

摘要翻译： 一种用于过滤化学品的方法，其中通过过滤器过滤存储在第一罐中的第一化学品的化学品和通过过滤获得的第二化学品储存在第二罐中的方法：将对应于各个第一化学品的捕获量首先添加到n 储存在第一个储罐中，并获得额外的捕获量; 以及比较所添加的捕获量和所述滤波器的预定极限捕获量，以及基于所述比较结果交换所述滤波器。

公开(公告)号：US20070010028A1

公开(公告)日：2007-01-11

申请号：US11475125

申请日：2006-06-27

申请人： Takehiro Kondoh ,  Hisako Aoyama ,  Eishi Shiobara ,  Shinichi Ito

发明人： Takehiro Kondoh ,  Hisako Aoyama ,  Eishi Shiobara ,  Shinichi Ito

IPC分类号： G01N21/00

CPC分类号： G01N15/14 ,  G01N2015/1493

摘要： A method for qualifying a chemical solution is disclosed. This method (a) obtains the number of particles in a chemical solution for each size of the particles, and (b) predicts, for each size of the particles, the influence of the chemical solution on a device to be fabricated by using the chemical solution. The degree of influence of the chemical solution on the device is obtained by using the results of (a) and (b). The quality of the chemical solution is evaluated on the basis of the obtained result, and whether the chemical solution is good or bad is determined on the basis of the evaluation result. On the basis of the determination result, the chemical solution is qualified as a chemical solution for use in a fabrication step of the device.

摘要翻译： 公开了一种用于限定化学溶液的方法。 该方法（a）获得每种颗粒尺寸的化学溶液中的颗粒数，（b）对于每种尺寸的颗粒，预测化学溶液对通过使用化学品制造的装置的影响 解。 通过使用（a）和（b）的结果获得化学溶液对器件的影响程度。 基于获得的结果评价化学溶液的质量，根据评价结果确定化学溶液的好坏。 在确定结果的基础上，化学溶液被认定为用于装置的制造步骤中的化学溶液。

公开(公告)号：US6060368A

公开(公告)日：2000-05-09

申请号：US206364

申请日：1998-12-07

申请人： Koji Hashimoto ,  Hisako Aoyama ,  Soichi Inoue ,  Kazuko Yamamoto ,  Sachiko Kobayashi

发明人： Koji Hashimoto ,  Hisako Aoyama ,  Soichi Inoue ,  Kazuko Yamamoto ,  Sachiko Kobayashi

IPC分类号： G03F1/36 ,  G03F1/72 ,  G03F7/20 ,  H01L21/027 ,  H01L21/76

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： This invention is provided to eliminate the optical proximity effect which will occur because of different rates of dimensional change between before and after etching when a plurality of gate materials are etched in a single device. After a to-be-corrected region is extracted, an n.sup.+ -type polysilicon gate layer is extracted. Then, the distance is calculated from the n.sup.+ -type polysilicon gate layer to a pattern adjacent thereto which can be a p.sup.+ -type polysilicon gate layer, thereby correcting the size of the n.sup.+ -type polysilicon gate layer with reference to a correction table for the pattern adjacent to the n.sup.+ -type polysilicon gate layer. After that, a p.sup.+ -type polysilicon gate layer is extracted. Then, the distance is calculated from the p.sup.+ -type polysilicon gate layer to a pattern adjacent thereto which can be an n.sup.+ -type polysilicon gate layer, thereby correcting the size of the p.sup.+ -type polysilicon gate layer with reference to a correction table for the pattern adjacent to the p.sup.+ -type polysilicon gate layer.

摘要翻译： 提供本发明以消除当在单个器件中蚀刻多个栅极材料时在蚀刻之前和之后不同的尺寸变化率而将发生的光学邻近效应。 在提取待校正区域之后，提取n +型多晶硅栅极层。 然后，从n +型多晶硅栅极层到可以是p +型多晶硅栅极层的与其相邻的图案计算距离，从而参照n +型多晶硅栅极层的校正表来校正n +型多晶硅栅极层的尺寸 图案与n +型多晶硅栅极层相邻。 之后，提取p +型多晶硅栅极层。 然后，从p +型多晶硅栅极层到与其相邻的图案，其可以是n +型多晶硅栅极层，从而根据用于的p +型多晶硅栅极层的校正表来校正p +型多晶硅栅极层的尺寸， 图案与p +型多晶硅栅极层相邻。