公开(公告)号：US06794286B2

公开(公告)日：2004-09-21

申请号：US09558053

申请日：2000-04-26

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散 形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US5994030A

公开(公告)日：1999-11-30

申请号：US30888

申请日：1998-02-26

申请人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

发明人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  G03F7/20 ,  H01J37/317 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/203 ,  G03F7/2059 ,  G03F7/7045 ,  H01J37/3174

摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

公开(公告)号：US06465290B1

公开(公告)日：2002-10-15

申请号：US09818409

申请日：2001-03-27

申请人： Kyoichi Suguro ,  Kouji Matsuo ,  Atsushi Murakoshi ,  Yasuhiko Sato ,  Hiromi Niiyama

发明人： Kyoichi Suguro ,  Kouji Matsuo ,  Atsushi Murakoshi ,  Yasuhiko Sato ,  Hiromi Niiyama

IPC分类号： H01L21338

CPC分类号： H01L29/6659 ,  H01L29/66537 ,  H01L29/66545

摘要： Claimed and disclosed is a method of manufacturing a semiconductor device, the method comprising the steps of forming a dummy gate on a semiconductor substrate, forming a source-drain diffusion region by introducing an impurity into the semiconductor substrate having the dummy gate as a mask, removing the dummy gate to form an opening, and forming a gate electrode within the opening with a gate insulating film formed below the gate electrode. The dummy gate is further formed by coating the semiconductor substrate with a polymer having a higher carbon content than hydrogen content so as to form a polymer film, forming a photoresist pattern on the polymer film, and transferring the pattern shape of the photoresist pattern onto the polymer film.

摘要翻译： 权利要求和公开的是一种制造半导体器件的方法，所述方法包括以下步骤：在半导体衬底上形成虚拟栅极，通过将杂质引入到具有伪栅极的半导体衬底中作为掩模形成源极 - 漏极扩散区域， 去除所述虚拟栅极以形成开口，并且在所述开口内形成栅极电极，所述栅极绝缘膜形成在所述栅电极下方。 通过用具有比氢含量高的碳含量的聚合物涂覆半导体衬底以形成聚合物膜，在聚合物膜上形成光刻胶图案，并将光致抗蚀剂图案的图案形状转印到 聚合物膜。

公开(公告)号：US6093931A

公开(公告)日：2000-07-25

申请号：US410018

申请日：1999-10-01

申请人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

发明人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  G03F7/20 ,  H01J37/317 ,  H01J37/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/203 ,  G03F7/2059 ,  G03F7/7045 ,  H01J37/3174

摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

摘要翻译： 通过光分辨率形成超过曝光分辨率极限的粗糙图案。 通过电荷束曝光形成不超过曝光的分辨率极限的精细图案。 结合粗糙图案和精细图案产生期望的图案。 曝光和电荷束曝光之间的工作共享表现出高曝光量和电荷束曝光的优异分辨能力。

公开(公告)号：US06020107A

公开(公告)日：2000-02-01

申请号：US159644

申请日：1998-09-24

申请人： Hiromi Niiyama ,  Shinji Sato ,  Shunko Magoshi

发明人： Hiromi Niiyama ,  Shinji Sato ,  Shunko Magoshi

IPC分类号： G03F7/38 ,  G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/7045 ,  G03F7/0045 ,  G03F7/2022

摘要： A rough pattern is formed on a chemically amplified resist by light exposing, and a fine pattern is formed by EB exposing. The resist is heated not only after EB exposing but also after light exposing. After this, the resist on which the rough and the fine patterns are formed is developed. As a result of this, diffusion or deactivation of an acid can be suppressed, and dimensional errors can be reduced.

摘要翻译： 通过曝光在化学放大抗蚀剂上形成粗糙图案，通过EB曝光形成精细图案。 抗蚀剂不仅在EB曝光之后而且在曝光后也被加热。 之后，形成粗糙和精细图案形成的抗蚀剂。 结果，可以抑制酸的扩散或失活，并且可以降低尺寸误差。

公开(公告)号：US5592024A

公开(公告)日：1997-01-07

申请号：US330998

申请日：1994-10-28

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/41 ,  H01L29/43

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915

摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散 形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US6090699A

公开(公告)日：2000-07-18

申请号：US736324

申请日：1996-10-23

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915

摘要： A method of making a semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 制造半导体器件的方法包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的用于防止金属扩散的绝缘阻挡层 构成布线层，形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。