发明授权
US6093598A Process for exactly transferring latent images in photo-resist layer
nonuniform in thickness in fabrication of semiconductor integrated
circuit device
有权
在半导体集成电路器件的制造中，在厚度不均匀的光致抗蚀剂层中精确地转印潜像的方法
- 专利标题： Process for exactly transferring latent images in photo-resist layer nonuniform in thickness in fabrication of semiconductor integrated circuit device
- 专利标题（中）： 在半导体集成电路器件的制造中，在厚度不均匀的光致抗蚀剂层中精确地转印潜像的方法
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申请号： US206193申请日： 1998-12-04
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公开(公告)号： US6093598A公开(公告)日： 2000-07-25
- 发明人: Naoyuki Yoshida
- 申请人： Naoyuki Yoshida
- 申请人地址： JPX
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX
- 优先权： JPX9-334390 19971204
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/16 ; H01L21/027 ; H01L21/311 ; H01L21/768 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/108 ; H01L21/8234
摘要：
A semiconductor stacked type dynamic random access memory device has a node contact hole formed in an inter-level insulating layer and a storage electrode held in contact with a source region of an access transistor through the node contact hole, and the node contact hole and the storage electrode are patterned by using a photo-lithography and an etching, wherein a photo-resist mask for the node contact hole is different in thickness from a photo-resist mask for the storage electrode by value equivalent to a half of the period of the periodicity representative of sensitized characteristics of the photo-resist in the presence of an optical standing wave in the photo-resist masks, thereby keeping the nesting tolerance between the two patterns.
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