发明授权
- 专利标题： Method for fabricating semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US949397申请日： 1997-10-14
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公开(公告)号： US6096630A公开(公告)日： 2000-08-01
- 发明人: Jeong Soo Byun , Byung Hak Lee
- 申请人： Jeong Soo Byun , Byung Hak Lee
- 申请人地址： KRX Cheongju
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Cheongju
- 优先权： KRX97/49799 19970929
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/28 ; H01L21/336 ; H01L21/8238 ; H01L27/10 ; H01L21/3205 ; H01L21/4763
摘要：
Method for fabricating a semiconductor device, is disclosed, which is suitable for improving a resistivity, including the steps of forming a silicon layer on a substrate, forming a crystalline metal silicide layer on the silicon layer, forming an amorphous metal silicide layer by injecting ions into the crystalline metal silicide layer, and crystallizing the amorphous metal silicide by heat treating the amorphous metal silicide.
公开/授权文献
- US5543846A Motion picture encoding system 公开/授权日：1996-08-06