发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US081010申请日： 1998-05-19
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公开(公告)号： US6096631A公开(公告)日： 2000-08-01
- 发明人: Kenro Nakamura , Rempei Nakata , Yusuke Kohyama , Nobuo Hayasaka
- 申请人： Kenro Nakamura , Rempei Nakata , Yusuke Kohyama , Nobuo Hayasaka
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX9-129596 19970520
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/304 ; H01L21/321 ; H01L21/768 ; H01L21/44
摘要：
The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a first film on an entire surface of a substrate having a recessed portion, including a bottom surface and a side wall of the recessed portion, without completely filling the recessed portion, forming a second film on an entire surface of the first film such that the recessed portion, on the bottom surface and the side wall of which the first film is formed, is completely filled, and polishing the first and second films by a chemical-mechanical polishing method such that the substrate is exposed and the first and second films in the recessed portion remain.
公开/授权文献
- USD408068S Water sprayer 公开/授权日：1999-04-13
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