发明授权
- 专利标题: Integrated memory
- 专利标题(中): 集成内存
-
申请号: US344922申请日: 1999-06-28
-
公开(公告)号: US06101141A公开(公告)日: 2000-08-08
- 发明人: Sabine Schoniger , Peter Schrogmeier , Thomas Hein , Stefan Dietrich , Thilo Marx
- 申请人: Sabine Schoniger , Peter Schrogmeier , Thomas Hein , Stefan Dietrich , Thilo Marx
- 申请人地址: DEX Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DEX Munich
- 优先权: DEX19828657 19980626
- 主分类号: G11C11/409
- IPC分类号: G11C11/409 ; G11C7/06 ; G11C7/10 ; G11C11/4096 ; G11C7/02
摘要:
The integrated memory has a data line pair, which is connected to a bit line pair via at least one differential amplifier. In addition, it has a control unit for setting first potential states on the data line pair which correspond to the differential signals of data to be written to the memory cells, and for setting at least one second potential state on the data line pair which does not correspond to any datum to be written to the memory cells. Furthermore, it has a detector unit having two inputs connected to the data line pair. The detector unit initiates a specific control function when the second potential state of the data line pair occurs.
公开/授权文献
- US5571338A Photovoltaic module and a photovoltaic apparatus 公开/授权日:1996-11-05