摘要:
In a semiconductor memory, bit lines are disposed in such a way that in each case two inverted and two non-inverted bit lines lie next to one another. Adjacent switching transistors for connecting the bit lines to an inverted or a non-inverted collective line are connected to the corresponding collective line by a common contact. An advantage in terms of area is afforded by the fact that the two switching transistors have a common doping region.
摘要:
The integrated memory has a data line pair, which is connected to a bit line pair via at least one differential amplifier. In addition, it has a control unit for setting first potential states on the data line pair which correspond to the differential signals of data to be written to the memory cells, and for setting at least one second potential state on the data line pair which does not correspond to any datum to be written to the memory cells. Furthermore, it has a detector unit having two inputs connected to the data line pair. The detector unit initiates a specific control function when the second potential state of the data line pair occurs.
摘要:
A circuit configuration includes two signal path sections that are used to program the delay of a signal path, in particular in DRAMs. The two signal path sections have different delays and can be driven in parallel at the input end. The two signal path sections can be connected to an output terminal via a multiplexer. A selection circuit includes two signal path sections which are connected between supply voltage potentials. The selection circuit has two complimentary transistors which are connected in series and has source-end programmable elements. These transistors can be driven by complimentary control signals. This permits the delay to be programmed flexibly with little expenditure on circuitry.
摘要:
The integrated memory has a column decoder for decoding column addresses and for addressing corresponding bit lines. The memory also has a first column address bus, which is used to transfer first column addresses to the column decoder, and a second column address bus, which is used to transfer second column addresses to the column decoder. The column decoder in each case addresses bit lines which correspond to the first and second column addresses supplied to it.
摘要:
The voltage pump for generating a boosted output voltage has a switch-on control circuit. The switch-on control includes a transistor that is connected between a terminal for feeding in a supply voltage and the terminal for tapping off the boosted output voltage. After the voltage pump has started to operate, the boosted output voltage is decoupled from the supply voltage by the transistor. A changeover switch forwards the respective higher of the output voltage or supply voltage to the substrate terminal and gate terminal of the transistor. The switch-on control enables early provision of a boosted output voltage in conjunction with reliable start-up operation of the voltage pump, while the additional outlay on circuitry is minimized.
摘要:
A memory chip with a short data access time limits the propagation time of a bit on local data line strips which are far away from output amplifiers by centering switches with respect to a center of the cell array strips, wherein the switches are junction points between local data lines and main data lines.
摘要:
Integrated circuits, in particular memory chips of the DDR SDRAM type, are tested in a parallel manner. In order to prevent the circuits from being driven relative to one another during a test operation, an input terminal that is already connected to a channel of an automatic test machine anyway is connected to a switching device, by which the output drivers can be turned off in a manner dependent on the control signal that can be fed in at the input terminal. The switching device preferably contains a demultiplexer and also a multiplexer. The demultiplexer can be driven by a test control signal that is additionally generated besides the test control signal. The input terminal is connected to a tester channel anyway during test operation, with the result that no additional external outlay arises.
摘要:
An integrated memory is described which has a memory cell array with column lines and row lines. A row access controller serves for activating one of the row lines and for controlling a deactivation operation. An input of a control unit is connected to a signal terminal for a signal that, in the event of a read access to one of the memory cells, defines the beginning of data outputting to a point outside the memory cell array. The data output is synchronized with a clock signal. In this case, the signal is adjustable depending on an operating frequency of the memory. An output signal of the control unit serves for triggering the deactivation operation of one of the row lines after a write access. Therefore, in the event of a write access, a comparatively high data throughput is possible even at different operating frequencies of the integrated memory.
摘要:
An apparatus for generating a second signal having a clock based on a second clock from a first signal with a first clock comprises first and second means for sampling the first signal to determine whether the first signal has a predetermined logic state, wherein first means samples the first signal with the second clock, and second means samples the first signal with a clock phase shifted to the second clock. Means for generating the second signal generates the second signal based on the second clock if it has been determined by at least one means for sampling that the first signal has the predetermined state. Especially for time critical applications, such as a DDR-RAM, a valuable latency saving is provided by the present invention.
摘要:
The imaging system provides assistance during the positioning of a measuring tip as it is placed onto a contact region of a microchip, in order to measure an on-chip signal. The contact region is imaged in a magnified fashion. An insertion device is provided that is suitable for providing a display of the on-chip signal in the imaging plane.