A method of forming a deep contact by forming a dielectric layer 20 over a semiconductor structure 10. A main point is that the hard mask 30 is removed after the plug 52 is formed. A hard mask layer 30 is formed over the dielectric layer 20. A contact photoresist layer 36 is formed over the hard mask layer 30. The hard mask layer 30 is etched through the contact photoresist opening 39 to form a contact hard mask opening 41 exposing the dielectric layer 20. The dielectric layer 20 is etched using a high density plasma etch process using the contact photoresist layer 36 and the hard mask layer 30 as an etch mask forming a contact hole 40 in the dielectric layer 20. The contact photoresist layer 36 is removed. A metal layer 50 is formed filling the contact hole 40 and covering over the hard mask layer 30. The metal layer 50 is etched back forming a plug 52 filling the contact hole 40. Now, the hard mask layer 30 is removed. The removal of the hard mask 30 after the metal layer 50 deposition: (a) prevents the contact hole 40 from being contaminated from photoresist and other contamination formed during the hard mask 30 removal steps; and (b) creates a plug 52 that does not have a recess.