发明授权
- 专利标题： Silicide layer forming method and semiconductor integrated circuit
- 专利标题（中）： 硅化物层形成方法和半导体集成电路
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申请号： US429395申请日： 1999-10-28
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公开(公告)号： US6107156A公开(公告)日： 2000-08-22
- 发明人: Satoshi Shimizu , Hidekazu Oda
- 申请人： Satoshi Shimizu , Hidekazu Oda
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-22426 19970205
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L21/321 ; H01L21/3213 ; H01L21/336 ; H01L29/423 ; H01L29/78 ; H01L21/8242
摘要：
A surface of a conductive member such as a gate electrode provided with a silicon layer is roughened. The roughened silicon layer is silicified so that its width is substantially increased, whereby phase transition of the silicide layer is simplified. Thus, the resistance of the refined silicide layer is reduced due to the simplified phase transition.
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