- 专利标题： Copper sputtering target assembly and method of making same
-
申请号： US324299申请日： 1999-06-02
-
公开(公告)号： US6113761A公开(公告)日： 2000-09-05
- 发明人: Janine K. Kardokus , Chi tse Wu , Christopher L. Parfeniuk , Jane E. Buehler
- 申请人： Janine K. Kardokus , Chi tse Wu , Christopher L. Parfeniuk , Jane E. Buehler
- 申请人地址： WA Spokane
- 专利权人： Johnson Matthey Electronics, Inc.
- 当前专利权人： Johnson Matthey Electronics, Inc.
- 当前专利权人地址： WA Spokane
- 主分类号： B23K35/00
- IPC分类号： B23K35/00 ; B23K35/30 ; C22C9/00 ; C23C14/34 ; H01J37/34 ; H01L21/28 ; H01L21/285
摘要：
Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
公开/授权文献
- US5610803A Pulse width modulated power supply that reduces overshoot 公开/授权日：1997-03-11
信息查询
