发明授权
US6114056A Magnetic element, and magnetic head and magnetic memory device using
thereof
失效
磁性元件，以及使用其的磁头和磁存储器件
- 专利标题： Magnetic element, and magnetic head and magnetic memory device using thereof
- 专利标题（中）： 磁性元件，以及使用其的磁头和磁存储器件
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申请号： US074588申请日： 1998-05-08
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公开(公告)号： US6114056A公开(公告)日： 2000-09-05
- 发明人: Koichiro Inomata , Yoshiaki Saito , Katsutaro Ichihara , Keiichiro Yusu , Hideo Ogiwara
- 申请人： Koichiro Inomata , Yoshiaki Saito , Katsutaro Ichihara , Keiichiro Yusu , Hideo Ogiwara
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX9-118991 19970509; JPX10-039342 19980220
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; G11C11/16 ; G11C11/56 ; H01F10/32 ; H01L43/08 ; G11B5/66
摘要：
A magnetic element comprises a granular magnetic film which has ferromagnetic fine particles dispersed in a dielectric matrix and does not display superparamagnetism and further possesses a finite coercive force, and a ferromagnetic film. A granular magnetic film and a ferromagnetic film are stacked or arrayed along one surface of a substrate and constitutes a ferromagnetic tunnel junction film. In the ferromagnetic tunnel junction film, the granular magnetic film functions as a barrier. Of the granular magnetic film and the ferromagnetic film, by varying spin direction of one ferromagnetic film through an external magnetic field, a giant magnetoresistance effect is manifested. Such a magnetic element is characterized in that magnetoresistance change rate is large, saturation magnetic field is small, resistance of the element can be controlled to an appropriate value, performance is small in its variation and stable.
公开/授权文献
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