发明授权
US06114228A Method of making a semiconductor device with a composite gate dielectric
layer and gate barrier layer
失效
制造具有复合栅极介电层和栅极阻挡层的半导体器件的方法
- 专利标题： Method of making a semiconductor device with a composite gate dielectric layer and gate barrier layer
- 专利标题（中）： 制造具有复合栅极介电层和栅极阻挡层的半导体器件的方法
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申请号： US120245申请日： 1998-07-21
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公开(公告)号： US06114228A公开(公告)日： 2000-09-05
- 发明人: Mark I. Gardner , Mark C. Gilmer
- 申请人： Mark I. Gardner , Mark C. Gilmer
- 申请人地址： TX Houston
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： TX Houston
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/51 ; H01L21/3205 ; H01L21/00
摘要：
The present invention is directed to a new semiconductor device and a method for making same. The new semiconductor device is comprised of a gate barrier layer, a composite gate dielectric layer, a conductor layer, and at least one source/drain region formed in a semiconducting substrate. The method comprises forming the gate barrier layer, composite gate dielectric layer and conductor layer, patterning those layers, and forming at least one source/drain region in said semiconductor substrate. The composite gate dielectric layer is comprised of at least two different materials having different dielectric constants.
公开/授权文献
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