发明授权
US6117482A Method and apparatus for monitoring CVD liquid source for forming thin
film with high dielectric constant
失效
用于监测用于形成具有高介电常数的薄膜的CVD液体源的方法和装置
- 专利标题： Method and apparatus for monitoring CVD liquid source for forming thin film with high dielectric constant
- 专利标题（中）： 用于监测用于形成具有高介电常数的薄膜的CVD液体源的方法和装置
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申请号： US89491申请日： 1998-06-02
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公开(公告)号： US6117482A公开(公告)日： 2000-09-12
- 发明人: Takaaki Kawahara , Tsuyoshi Horikawa , Masayoshi Tarutani , Mikio Yamamuka
- 申请人： Takaaki Kawahara , Tsuyoshi Horikawa , Masayoshi Tarutani , Mikio Yamamuka
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-335656 19971205
- 主分类号： G01N21/33
- IPC分类号： G01N21/33 ; C23C16/18 ; C23C16/448 ; C23C16/52 ; H01L21/31 ; B05D5/12 ; C23C16/06
摘要：
An object is to provide a method of monitoring a CVD liquid source for forming a thin film having a high dielectric constant, which allows detection of the concentration abnormality and the deterioration of the CVD liquid source. First, the CVD liquid source used as a sources of chemical vapor deposition is prepared by dissolving an organometallic compound of dipivaloyolmethane type in an organic solvent. Secondly, a spectroscopy of the CVD liquid source is performed.
公开/授权文献
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