利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

23 条记录 (耗时 0.027 秒)

    Chemical vapor deposition apparatus
    1.
    发明授权
    Chemical vapor deposition apparatus 失效
    化学气相沉积装置

    公开(公告)号：US6110283A

    公开(公告)日：2000-08-29

    申请号：US912938

    申请日：1997-08-15

    申请人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa

    发明人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/4481 ,  C23C16/448

    摘要： A chemical vapor deposition apparatus to reduce generation of contaminants such as residues within the apparatus can be obtained. The chemical vapor deposition apparatus includes a CVD source container, a vaporizer and reaction unit. The vaporizer has a nozzle attached thereto. The nozzle has a tip portion and a thick portion. The reaction unit includes a mixing unit. The mixing unit includes an oxidizer supply pipe as well as a heating portion having a helical side groove and heating means. Reaction unit further includes a reaction chamber surrounded by a wall surface. The inside of the wall surface is covered with an inactive cover layer, and the wall surface is heated to a temperature range of 300-500.degree. C.

    摘要翻译： 可以获得化学气相沉积装置，以减少装置内残留物等杂质的产生。 化学气相沉积装置包括CVD源容器，蒸发器和反应单元。 蒸发器具有附接到其上的喷嘴。 喷嘴具有尖端部分和较厚部分。 反应单元包括混合单元。 混合单元包括氧化剂供应管以及具有螺旋侧槽和加热装置的加热部分。 反应单元还包括由壁表面包围的反应室。 壁面内侧覆盖有不活泼的覆盖层，壁面被加热至300-500℃的温度范围。

    Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor device
    8.
    发明授权
    Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor device 失效
    液体原料蒸发器，半导体器件及制造半导体器件的方法

    公开(公告)号：US06512885B1

    公开(公告)日：2003-01-28

    申请号：US09658039

    申请日：2000-09-08

    申请人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa

    发明人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa

    IPC分类号： F24F600

    CPC分类号： H01L21/67098 ,  C23C16/4481

    摘要： A vaporizing chamber is constituted by a vaporizer body and an upper vaporizer cover, and a raw material supply pipe for introducing a liquid raw material into the vaporizing chamber is connected to the upper vaporizer cover. In order to suppress transmission of heat from the vaporizing chambers and to the raw material supply pipe, a heat radiation preventing member is provided on a surface of an external wall of each of the vaporizing chambers and. Consequently, a liquid raw material vaporizer capable of suppressing the generation of a vaporization residue is provided, and a semiconductor device including a CVD film having a stable thickness and a method of manufacturing the semiconductor device are obtained.

    摘要翻译： 蒸发室由蒸发器主体和上蒸发器盖构成，并且用于将液体原料引入蒸发室的原料供给管连接到上蒸发器盖。 为了抑制从蒸发室和原料供给管的热传递，在每个蒸发室的外壁的表面上设置防辐射部件。 因此，提供了能够抑制蒸发残渣产生的液体原料蒸发器，得到具有稳定厚度的CVD膜和制造半导体器件的方法的半导体器件。

    Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby
    9.
    发明授权
    Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby 失效
    用于化学气相沉积设备的蒸发器，化学气相沉积设备和由此制造的半导体器件

    公开(公告)号：US06470144B1

    公开(公告)日：2002-10-22

    申请号：US09444556

    申请日：1999-11-19

    申请人： Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Mikio Yamamuka ,  Shigeru Matsuno ,  Takehiko Sato

    发明人： Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Mikio Yamamuka ,  Shigeru Matsuno ,  Takehiko Sato

    IPC分类号： C23C1600

    CPC分类号： C23C16/4486

    摘要： There are provided a vaporizer for use with a CVD apparatus and a CVD apparatus, capable of long-term, reliable and efficient production of CVD film with good properties, and a semiconductor device manufactured employing the same. The vaporizer for use with a CVD apparatus is comprised of a material introducing tube, a vaporization chamber and a cooling member. The material introducing tube transports a mixture containing a solution of a material for the CVD film and a gas carrying the solution. The vaporization chamber is connected to the material introducing tube to vaporize the material introduced through the material introducing tube. The cooling member cools that portion of the material introducing tube adjacent to the vaporization chamber.

    摘要翻译： 本发明提供一种能够长期，可靠，高效地生产具有良好性能的CVD膜的CVD设备和CVD设备使用的蒸发器，以及使用该蒸发器制造的半导体器件。 用于CVD装置的蒸发器由材料导入管，蒸发室和冷却构件组成。 材料导入管输送含有用于CVD膜的材料的溶液和携带溶液的气体的混合物。 蒸发室连接到材料导入管，以蒸发通过材料导入管引入的材料。 冷却部件冷却与蒸发室相邻的材料导入管的那部分。