发明授权
- 专利标题: Method of etching using hydrofluorocarbon compounds
- 专利标题(中): 使用氢氟烃化合物进行蚀刻的方法
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申请号: US1755申请日: 1997-12-31
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公开(公告)号: US6120697A公开(公告)日: 2000-09-19
- 发明人: Timothy R. Demmin , Matthew H. Luly , Mohammed A. Fathimulla
- 申请人: Timothy R. Demmin , Matthew H. Luly , Mohammed A. Fathimulla
- 申请人地址: NJ Morristown
- 专利权人: AlliedSignal Inc
- 当前专利权人: AlliedSignal Inc
- 当前专利权人地址: NJ Morristown
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/205 ; H01L21/3065 ; H01L21/311 ; C09K13/06 ; C09K13/00
摘要:
A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula C.sub.X H.sub.C F.sub.Zwherein: x=3, 4 or 5;2x.gtoreq.z.gtoreq.y;and y+z=2x+2; andfurther including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.
公开/授权文献
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