发明授权
- 专利标题： Method of contacting a silicide-based schottky diode
- 专利标题（中）： 接触硅化物肖特基二极管的方法
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申请号： US312945申请日： 1999-05-17
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公开(公告)号： US6121122A公开(公告)日： 2000-09-19
- 发明人: James Stuart Dunn , Peter Brian Gray , Kenneth Knetch Kieft, III , Nicholas Theodore Schmidt , Stephen St. onge
- 申请人： James Stuart Dunn , Peter Brian Gray , Kenneth Knetch Kieft, III , Nicholas Theodore Schmidt , Stephen St. onge
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/64 ; H01L29/56 ; H01L29/62
摘要：
A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicide that is fully bordered by silicide with respect to an internal edge of the guard ring.
公开/授权文献
- US5549095A Power train having supercharged engine 公开/授权日：1996-08-27
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