Invention Grant
US6130002A Process for producing organically modified oxide, oxynitride or nitride
layers by vacuum deposition
失效
通过真空沉积生产有机改性氧化物,氮氧化物或氮化物层的方法
- Patent Title: Process for producing organically modified oxide, oxynitride or nitride layers by vacuum deposition
- Patent Title (中): 通过真空沉积生产有机改性氧化物,氮氧化物或氮化物层的方法
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Application No.: US91487Application Date: 1998-07-22
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Publication No.: US6130002APublication Date: 2000-10-10
- Inventor: Manfred Neumann , Siegfried Schiller , Henry Morgner , Nicolas Schiller , Steffen Straach
- Applicant: Manfred Neumann , Siegfried Schiller , Henry Morgner , Nicolas Schiller , Steffen Straach
- Applicant Address: DEX Munich
- Assignee: Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Current Assignee: Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Current Assignee Address: DEX Munich
- Priority: DEX19548160 19951222
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/08 ; C23C14/32 ; B32B9/00 ; H05H1/00
Abstract:
Method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of evaporation material comprising nitride-forming evaporation material and one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. A method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. Substrates with an organically-modified oxide, oxinitride or nitride layer, as produced by the methods, wherein the at least one layer deposited by plasma-enhanced, high-rate vapor deposition includes more than 50 wt% of inorganic molecules and less than 50 wt% of partially cross-linked organic molecules.
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