发明授权
- 专利标题： Dry etching method of a silicon thin film
- 专利标题（中）： 硅薄膜的干蚀刻方法
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申请号： US119993申请日： 1998-07-21
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公开(公告)号： US6133157A公开(公告)日： 2000-10-17
- 发明人: Takehisa Sakurai , Hitoshi Ujimasa , Katsuhiro Kawai , Atsushi Ban , Masaru Kajitani , Mikio Katayama
- 申请人： Takehisa Sakurai , Hitoshi Ujimasa , Katsuhiro Kawai , Atsushi Ban , Masaru Kajitani , Mikio Katayama
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushike Kaisha
- 当前专利权人： Sharp Kabushike Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX4-321023 19921130
- 主分类号： G02F1/13
- IPC分类号： G02F1/13 ; G02F1/136 ; G02F1/1368 ; H01L21/302 ; H01L21/3065 ; H01L21/3213 ; H01L21/336 ; H01L29/78 ; H01L29/786
摘要：
In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chloride gas.
公开/授权文献
- US5491611A Aligned quick connect cover for a computer system 公开/授权日：1996-02-13