发明授权
- 专利标题: Method and apparatus for reading a magnetoresistive memory
- 专利标题(中): 读取磁阻存储器的方法和装置
-
申请号: US365308申请日: 1999-07-30
-
公开(公告)号: US06134138A公开(公告)日: 2000-10-17
- 发明人: Yong Lu , Theodore Zhu
- 申请人: Yong Lu , Theodore Zhu
- 申请人地址: NJ Morristown
- 专利权人: Honeywell Inc.
- 当前专利权人: Honeywell Inc.
- 当前专利权人地址: NJ Morristown
- 主分类号: G11C11/14
- IPC分类号: G11C11/14 ; G11C11/15 ; G11C11/16 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; G11C11/00
摘要:
A method and apparatus for reading a magnetoresistive memory is disclosed wherein the wordline current is turned off during selected sensing operations. This substantially eliminates the noise that is typically injected by the wordline current into the bit structures during the sensing operations, which increases the signal-to-noise ratio on the sense lines. This, in turn, significantly increases the speed of the sensing operations and thus the read access time of the memory. Substantial power savings are also realized.
公开/授权文献
- US4936116A Gem compound 公开/授权日:1990-06-26