发明授权
US6136654A Method of forming thin silicon nitride or silicon oxynitride gate
dielectrics
失效
形成薄氮化硅或氮氧化硅栅极电介质的方法
- 专利标题: Method of forming thin silicon nitride or silicon oxynitride gate dielectrics
- 专利标题(中): 形成薄氮化硅或氮氧化硅栅极电介质的方法
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申请号: US984967申请日: 1997-12-04
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公开(公告)号: US6136654A公开(公告)日: 2000-10-24
- 发明人: Robert Kraft , Sunil Hattangady , Douglas T. Grider
- 申请人: Robert Kraft , Sunil Hattangady , Douglas T. Grider
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/8234 ; H01L29/51 ; H01L21/336 ; H01L21/31 ; H01L21/469
摘要:
An embodiment of the instant invention is a method of forming a dielectric layer, the method comprising the steps of: providing a semiconductor substrate (substrate 12), the substrate having a surface; forming an oxygen-containing layer (layer 14) on the semiconductor substrate; and subjecting the oxygen-containing layer to a nitrogen containing plasma (plasma 16) so that the nitrogen is either incorporated into the oxygen-containing layer (see regions 18, 19, and 20) or forms a nitride layer at the surface of the substrate (region 22). Using this embodiment of the instant invention, the dielectric layer can be substantially free of hydrogen. Preferably, the oxygen-containing layer is an SiO.sub.2 layer or it is comprised of oxygen and nitrogen (preferably an oxynitride layer). The plasma is, preferably, a high-density plasma. Preferably, a source of nitrogen is introduced to the plasma to form the nitrogen containing plasma. The source of nitrogen is preferably comprised of a material consisting of: N.sub.2, NH.sub.3, NO, N.sub.2 O, or a mixture thereof.
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