Invention Grant
US6137138A MOSFET power transistor having offset gate and drain pads to reduce
capacitance
失效
MOSFET功率晶体管具有偏移栅极和漏极焊盘以减小电容
- Patent Title: MOSFET power transistor having offset gate and drain pads to reduce capacitance
- Patent Title (中): MOSFET功率晶体管具有偏移栅极和漏极焊盘以减小电容
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Application No.: US36484Application Date: 1997-03-06
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Publication No.: US6137138APublication Date: 2000-10-24
- Inventor: Francois Hebert
- Applicant: Francois Hebert
- Applicant Address: CA Sunnyvale
- Assignee: Spectrian Corporation
- Current Assignee: Spectrian Corporation
- Current Assignee Address: CA Sunnyvale
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L29/06 ; H01L29/417 ; H01L29/78 ; H01L31/119 ; H01L29/76
Abstract:
In an RF/microwave power amplifier comprising a linear array of MOSFET transistors in a semiconductor substrate, the transistors having gate and drain bond pads between adjacent transistors, drain to gate feedback capacitance is reduced by offsetting the drain bond pads from the gate bond pads. Bond wires to the drain bond pads extend in the offset direction from the drain bond pads, and bond wires to the gate bond pads extend from the gate bond pads in the opposite direction to reduce capacitive coupling between the bond wires and reduce the length of the bond wires.
Public/Granted literature
- USD375372S Pocket flashlight Public/Granted day:1996-11-05
Information query
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