发明授权
US6144070A High breakdown-voltage transistor with electrostatic discharge protection
有权
具有静电放电保护的高击穿电压晶体管
- 专利标题： High breakdown-voltage transistor with electrostatic discharge protection
- 专利标题（中）： 具有静电放电保护的高击穿电压晶体管
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申请号： US141496申请日： 1998-08-28
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公开(公告)号： US6144070A公开(公告)日： 2000-11-07
- 发明人: Joseph A. Devore , Ross E. Teggatz , David J. Baldwin
- 申请人： Joseph A. Devore , Ross E. Teggatz , David J. Baldwin
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L23/60
- IPC分类号： H01L23/60 ; H01L27/02 ; H01L29/06 ; H01L29/40 ; H01L29/739 ; H01L29/78 ; H01L29/76 ; H01L23/58 ; H01L23/62 ; H01L29/94
摘要：
A transistor including a source region 506 in a semiconductor body 502; a bulk region 508 in the semiconductor body adjacent the source region; a drain region in the semiconductor body adjacent the bulk region but opposite the source region, the drain region including doped regions 504,514 of n and p dopant types; and a field plate 516 formed over the semiconductor body adjacent the drain region between the drain region and the bulk region.
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