发明授权
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US220590申请日： 1998-12-28
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公开(公告)号： US6144097A公开(公告)日： 2000-11-07
- 发明人: Michio Asahina , Junichi Takeuchi , Naohiro Moriya , Kazuki Matsumoto
- 申请人： Michio Asahina , Junichi Takeuchi , Naohiro Moriya , Kazuki Matsumoto
- 申请人地址： JPX Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX10-148359 19980513
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/316 ; H01L21/768 ; H01L23/485 ; H01L23/522 ; H01L23/532 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A semiconductor device comprising a semiconductor substrate including an electronic element, interlayer dielectric (silicon oxide layer and BPSG layer) formed on the semiconductor substrate, a contact hole formed in the interlayer dielectric, a barrier layer formed on the interlayer dielectric and contact hole, and a wiring layer formed on the barrier layer. In the barrier layer, metal oxide (titanium oxide) are scattered in an island-like configuration. The barrier layer is formed by depositing a layer that is used to form the barrier layer and then introducing oxygen into the layer. The step is achieved by depositing a layer for the barrier layer, exposing the layer in oxygen plasma under reduced pressure, and subjecting the layer to the thermal processing, or, alternatively by depositing a layer for the barrier layer and subjecting the layer to thermal processing in an atmosphere of oxygen. The semiconductor device of the present invention has a barrier layer with excellent barrier properties.